IS43R16800A-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16800A-5TL-TR Datasheet - Page 9

• Manufacturer Part Number: IS43R16800A-5TL-TR
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800A-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800A
AC TEST CONDITIONS
AC TEST CONDITIONS
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
07/11/05
Output Load
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WPD
RPD
WRD
BSTW
BSTZ
RWD
HZP
WCD
WR
DMD
MRD
SNR
SRD
PDEN
PDEX
Parameter
Input High Voltage
Input Low Voltage
Input Signal Slew Rate
Input Timing Reference Level
Termination Voltage
Input Differential Voltage (CLK and CLK)
Input Differential Crossing Voltage
DQ
PARAMETER
Write to Pre-charge command delay (same bank)
Read to Pre-charge command delay (same bank)
Write to Read command delay (to input all data)
Burst Stop command to Write command delay
Burst Stop command to DQ High-Z
Read command to Write command delay (to output all data)
Pre-charge command to High-Z
Write command to data in latency
Write Recovery
DM to Data-In latency
Mode Register Set command cycle time
Self Refresh Exit to non-read command
Self Refresh Exit to Read command
Power Down Entry
Power Down Exit to command input
V
R
TT
C
T
L
= 50
= 30 pF
Symbol
V
V
V
V
SLEW
IH
ID
IX
IL
V
V
REF
(AC)
(AC)
(AC)
(AC)
TT
V
V
REF
REF
V
Value
V
V
0.62
DDQ
REF
REF
+ 0.31
1
- 0.31
/2
4 + BL/2
2 + BL/2
3 + BL/2
BL/2
200
15
3
3
3
1
3
0
2
1
1
V/ns
Unit
V
V
V
V
V
V
UNITS
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
ISSI
®
9