IS42S16100E-7TL ISSI, Integrated Silicon Solution Inc, IS42S16100E-7TL Datasheet

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... Rev. C 01/22/08 JANUARY 2008 DESCRIPTION ISSI ’s 16Mb Synchronous DRAM IS42S16100E/ IC42S16100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. ...

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... IS42S16100E, IC42S16100E PIN CONFIGURATION PACKAGE CODE BALL FBGA (Top View) (10 6.4 mm Body, 0.65 mm Ball Pitch PIN DESCRIPTIONS A0-A10 Row Address Input A0-A7 Column Address Input A11 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable Chip Select ...

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... IS42S16100E, IC42S16100E PIN FUNCTIONS Pin No. Symbol Type A0-A10 Input Pin A11 Input Pin 16 Input Pin CAS 34 CKE Input Pin 35 CLK Input Pin 18 Input Pin DQ0 to DQ Pin 12, 39, 40, 42, 43, DQ15 45, 46, 48, 49 14, 36 LDQM, Input Pin UDQM 17 Input Pin RAS 15 Input Pin ...

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... IS42S16100E, IC42S16100E FUNCTIONAL BLOCK DIAGRAM CLK CKE COMMAND CS DECODER RAS CAS & WE CLOCK MODE A11 GENERATOR REGISTER 11 A10 SELF A9 REFRESH REFRESH A8 CONTROLLER CONTROLLER A7 A6 REFRESH A5 COUNTER ROW ADDRESS LATCH 11 4 MEMORY CELL ROW ARRAY ADDRESS 2048 BUFFER BANK SENSE AMP I/O GATE ...

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... IS42S16100E, IC42S16100E ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage iN V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current cs T operating Temperature opr T Storage Temperature stg DC RECOMMENDED OPERATING CONDITIONS ...

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... IS42S16100E, IC42S16100E DC ELECTRICAL CHARACTERISTICS Symbol Parameter i Input Leakage Current il i Output Leakage Current ol V Output High Voltage Level Output Low Voltage Level Operating Current (1,2) cc1 i Precharge Standby Current CKE ≤ V cc2p I (In Power-Down Mode) cc2ps i Active Standby Current cc3N I (In Non Power-Down Mode) ...

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... IS42S16100E, IC42S16100E AC CHARACTERISTICS (1,2,3) Symbol Parameter t 3 Clock Cycle Time Access Time From CLK ( CLK HIGH Level Width chi t CLK LOW Level Width Output Data Hold Time Output LOW Impedance Time Output HIGH Impedance Time hz ( Input Data Setup Time ds t Input Data Hold Time ...

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... IS42S16100E, IC42S16100E OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( rac rcd cac t Command Period (REF to REF / ACT to ACT Command Period (ACT to PRE) ras ...

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... IS42S16100E, IC42S16100E COMMANDS Active Command CLK CKE HIGH CS RAS CAS WE A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 Write Command CLK HIGH CKE CS RAS CAS WE A0-A9 COLUMN AUTO PRECHARGE A10 NO PRECHARGE BANK 1 A11 BANK 0 Notes: 1. A8-A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E COMMANDS (cont.) No-Operation Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 Mode Register Set Command CLK HIGH CKE CS RAS CAS WE A0-A9 OP-CODE A10 OP-CODE A11 OP-CODE 10 Device Deselect Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 Auto-Refresh Command ...

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... IS42S16100E, IC42S16100E COMMANDS (cont.) Self-Refresh Command CLK CKE CS RAS CAS WE A0-A9 A10 A11 Clock Suspend Command CLK CKE BANK(S) ACTIVE CS NOP RAS NOP CAS NOP WE NOP A0-A9 A10 A11 Integrated Silicon Solution, Inc. — www.issi.com Rev. C 01/22/08 Power Down Command CLK ...

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... Active Command (CS, RAS = LOW, CAS, WE= HIGH) The IS42S16100E/IC42S16100E includes two banks of 2048 rows each. This command selects one of the two banks according to the A11 pin and activates the row selected by the pins A0 to A10. This command corresponds to the fall of the RAS signal from HIGH to LOW in conventional DRAMs ...

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... IS42S16100E, IC42S16100E Self-Refresh Command (CS, RAS, CAS, CKE = LOW HIGH) This command executes the self-refresh operation. The row address to be refreshed, the bank, and the refresh interval are generated automatically internally during this operation. The self-refresh operation is started by dropping the CKE pin from HIGH to LOW. The self-refresh operation continues as long as the CKE pin remains LOW and there is no need for external control of any other pins ...

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... IS42S16100E, IC42S16100E COMMAND TRUTH TABLE (1,2) Symbol Command MRS Mode Register Set (3,4) REF Auto-Refresh (5) SREF Self-Refresh (5,6) PRE Precharge Selected Bank PALL Precharge Both Banks ACT Bank Activate (7) WRIT Write WRITA Write With Auto-Precharge READ Read (8) READA Read With Auto-Precharge ...

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... IS42S16100E, IC42S16100E OPERATION COMMAND TABLE Current State Command Operation Idle DESL No Operation or Power-Down NOP No Operation or Power-Down BST No Operation or Power-Down READ / READA Illegal WRIT/WRITA Illegal ACT Row Active PRE/PALL No Operation REF/SELF Auto-Refresh or Self-Refresh MRS Mode Register Set Row Active DESL No Operation NOP ...

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... IS42S16100E, IC42S16100E OPERATION COMMAND TABLE Current State Command Operation Write With DESL Burst Write Continues, Write Recovery And Precharge Auto-Precharge When Done NOP Burst Write Continues, Write Recovery And Precharge BST Illegal READ/READA Illegal WRIT/WRITA Illegal Illegal (10) ACT Illegal (10) PRE/PALL REF/SELF ...

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... This is possible depending on the state of the bank selected by the A11 pin. 11. Time to switch internal busses is required. 12. The IS42S16100E/IC42S16100E can be switched to power-down mode by dropping the CKE pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time. ...

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... IS42S16100E, IC42S16100E CKE RELATED COMMAND TRUTH TABLE Current State Operation Self-Refresh Undefined Self-Refresh Recovery Self-Refresh Recovery Illegal (2) Illegal (2) Self-Refresh Self-Refresh Recovery Idle State After t Idle State After t Illegal Illegal Power-Down on the Next Cycle Power-Down on the Next Cycle Illegal Illegal Clock Suspend Termination on the Next Cycle ...

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... IS42S16100E, IC42S16100E TWO BANKS OPERATION COMMAND TRUTH TABLE Operation CS RAS CAS WE A11 A10 A9-A0 DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF MRS Notes HIGH level input, L: LOW level input, X: HIGH or LOW level input, RA: Row Address, CA: Column Address 2. The device state symbols are interpreted as follows: ...

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... IS42S16100E, IC42S16100E SIMPLIFIED STATE TRANSITION DIAGRAM WRIT CKE_ CKE CLOCK WRITA SUSPEND CKE_ CKE POWER APPLIED Automatic transition following the completion of command execution. Transition due to command input. 20 (One Bank Operation) SREF entry MRS MODE REF IDLE REGISTER SET CKE_ CKE ACT ...

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... IS42S16100E, IC42S16100E Device Initialization At Power-On (Power-On Sequence the case with conventional DRAMs, the IS42S16100E/ IC42S16100E product must be initialized by executing a stipulated power-on sequence after power is applied. After power is applied and Vdd and VddQ reach their stipulated voltages, set and hold the CKE and DQM pins HIGH for 100 µ ...

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... IS42S16100E, IC42S16100E MODE REGISTER A11 A10 WRITE MODE LT MODE M11 M10 Note: Other values for these bits are reserved. 22 Address Bus (Ax Mode Register (Mx Burst Length Burst Type Latency Mode 0 Write Mode 0 Burst Read & Single Write 0 Burst Read & Burst Write Integrated Silicon Solution, Inc. — ...

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... IS42S16100E, IC42S16100E BURST LENGTH AND COLUMN ADDRESS SEQUENCE Column Address Burst Length Full Page n n (256) Notes: 1. The burst length in full page mode is 256. Integrated Silicon Solution, Inc. — www.issi.com Rev. C 01/22/08 Address Sequence Sequential 0 0-1 1 1-0 0 0-1-2-3 1 1-2-3-0 0 2-3-0-1 1 3-0-1-2 ...

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... IS42S16100E, IC42S16100E BANK SELECT AND PRECHARGE ADDRESS ALLOCATION Row X0 — X1 — X2 — X3 — X4 — X5 — X6 — X7 — X8 — X9 — X10 0 1 Command) X11 0 1 Column Y0 — Y1 — Y2 — Y3 — Y4 — Y5 — Y6 — Y7 — Y8 — Y9 — Y10 0 1 Y11 Row Address Row Address ...

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... IS42S16100E, IC42S16100E Burst Read The read cycle is started by executing the read command. The address provided during read command execution is used as the starting address. First, the data corresponding to this address is output in synchronization with the clock signal after the CAS latency period. Next, data corresponding to an address generated automatically by the device is output in synchronization with the clock signal ...

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... IS42S16100E, IC42S16100E Read With Auto-Precharge The read with auto-precharge command first executes a burst read operation and then puts the selected bank in the precharged state automatically. After the precharge completes, the bank goes to the idle state. Thus this command performs a read command and a precharge command in a single operation ...

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... IS42S16100E, IC42S16100E Write With Auto-Precharge The write with auto-precharge command first executes a burst write operation and then puts the selected bank in the precharged state automatically. After the precharge completes the bank goes to the idle state. Thus this command performs a write command and a precharge command in a single operation ...

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... IS42S16100E, IC42S16100E Interval Between Read Command A new command can be executed while a read cycle is in progress, i.e., before that cycle completes. When the second read command is executed, after the CAS latency has elapsed, data corresponding to the new read command is output in place of the data due to the previous read command ...

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... IS42S16100E, IC42S16100E Interval Between Write and Read Commands A new read command can be executed while a write cycle is in progress, i.e., before that cycle completes. Data corresponding to the new read command is output after the CAS latency has elapsed from the point the new read command was executed ...

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... IS42S16100E, IC42S16100E Interval Between Read and Write Commands A read command can be interrupted and a new write command executed while the read cycle is in progress, i.e., before that cycle completes. Data corresponding to the new write command can be input at the point new write command is executed. To prevent collision ...

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... IS42S16100E, IC42S16100E Precharge The precharge command sets the bank selected by pin A11 to the precharged state. This command can be executed at a time t following the execution of an active ras command to the same bank. The selected bank goes to the idle state at a time t following the execution of the ...

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... IS42S16100E, IC42S16100E Write Cycle Interruption Using the Precharge Command A write cycle can be interrupted by the execution of the precharge command before that cycle completes. The delay time (t ) from the precharge command to the point wdl where burst input is invalid, i.e., the point where input data is no longer written to device internal memory is zero clock cycles regardless of the CAS ...

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... The IS42S16100E/IC42S16100E can output data continuously from the burst start address (a) to location a+255 during a read cycle in which the burst length is set to full page. The IS42S16100E/IC42S16100E repeats the operation starting at the 256th cycle with the data output returning to location (a) and continuing with a+1, a+2, a+3, etc ...

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... The IS42S16100E/IC42S16100E can input data continuously from the burst start address (a) to location a+255 during a write cycle in which the burst length is set to full page. The IS42S16100E/IC42S16100E repeats the operation starting at the 256th cycle with data input returning to location (a) and continuing with a+1, a+2, a+3, etc ...

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... CAS latency, as soon as one of the U/LDQM pins goes HIGH, the corresponding externally applied input data will no longer be written to the device internal circuits. Subsequently, the corresponding input continues to be muted as long as that U/LDQM pin remains HIGH. The IS42S16100E/IC42S16100E will revert to accepting input as soon as CLK COMMAND UDQM ...

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... CAS latency = 3 Clock Suspend When the CKE pin is dropped from HIGH to LOW during a read or write cycle, the IS42S16100E/IC42S16100E enters clock suspend mode on the next CLK rising edge. This command reduces the device power dissipation by stopping the device internal clock. Clock suspend mode continues as long as the CKE pin remains low ...

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... IS42S16100E, IC42S16100E OPERATION TIMING EXAMPLE Power-On Sequence, Mode Register Set Cycle CLK t CHI HIGH CKE RAS CAS A0- A10 BANK 0 & 1 A11 DQM HIGH DQ WAIT TIME t RP T=100 µs < > PALL CAS latency = 2, 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. C 01/22/08 ...

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... IS42S16100E, IC42S16100E Power-Down Mode Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0- A10 BANK 0 & 1 BANK A11 BANK 1 BANK 0 DQM < > PRE < > PALL CAS latency = CKS POWER DOWN MODE < > SBY Integrated Silicon Solution, Inc. — www.issi.com Tn Tn+1 Tn+2 ...

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... IS42S16100E, IC42S16100E Auto-Refresh Cycle CLK t CHI CKS CK CL CKE RAS CAS A0- A10 BANK 0 & 1 A11 DQM < > PALL CAS latency = 2, 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. C 01/22/ < > < > < REF REF Tm Tn Tn+1 ROW ROW BANK 1 BANK RAS t RC > ...

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... IS42S16100E, IC42S16100E Self-Refresh Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0- A10 BANK 0 & 1 A11 DQM < > PALL CAS latency = 2, 3 Note 1: A8,A9 = Don’t Care Tm CKS CKS EXIT SELF REFRESH MODE SELF REFRESH < > SELF Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S16100E, IC42S16100E Read Cycle CLK t CHI CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > < ACT READ CAS latency = 2, burstlength = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev. C ...

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... IS42S16100E, IC42S16100E Read Cycle / Auto-Precharge CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > < > ACT READA CAS latency = 2, burstlength = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN m AUTO PRE BANK 1 ...

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... IS42S16100E, IC42S16100E Read Cycle / Full Page CLK t CHI t t CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD t RAS t RC (BANK 0) < > < ACT 0 READ0 CAS latency = 2, burstlength = full page Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Read Cycle / Ping-Pong Operation (Bank Switching CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 0 A11 DQM DQ t RRD (BANK RCD (BANK 0) t RAS (BANK (BANK 0) < > ACT 0 CAS latency = 2, burstlength = 2 Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Write Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burstlength = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev. C ...

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... IS42S16100E, IC42S16100E Write Cycle / Auto-Precharge CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burstlength = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN m AUTO PRE BANK 1 BANK m+1 ...

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... IS42S16100E, IC42S16100E Write Cycle / Full Page CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 0 A11 DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 2, burst length = full page Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Ping-Pong Operation CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 0 A11 DQM DQ t RRD (BANK RCD (BANK 0) t RAS (BANK (BANK 0) < > ACT 0 CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Read Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Read Cycle / Page Mode; Data Masking CLK t CHI CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care (1) (1) COLUMN m COLUMN n ...

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... IS42S16100E, IC42S16100E Write Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Page Mode; Data Masking CLK t CHI t t CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care (1) (1) COLUMN m ...

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... IS42S16100E, IC42S16100E Read Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 2 Note 1: A8,A9 = Don’t Care CKS CKH (1) COLUMN m AUTO PRE ...

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... IS42S16100E, IC42S16100E Read Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 2, burst length = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 2, burst length = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN m NO PRE BANK BANK 0 ...

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... IS42S16100E, IC42S16100E Read Cycle / Byte Operation CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN m AUTO PRE ...

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... IS42S16100E, IC42S16100E Read Cycle, Write Cycle / Burst Read, Single Write CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burst length = 4 Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Read Cycle CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN m NO PRE BANK 1 BANK QMD ...

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... IS42S16100E, IC42S16100E Read Cycle / Auto-Precharge CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Read Cycle / Full Page CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD (BANK 0) t RAS (BANK (BANK 0) < > ACT 0 CAS latency = 3, burst length = full page Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Read Cycle / Ping Pong Operation (Bank Switching CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RRD (BANK RCD (BANK 0) t RAS (BANK (BANK 0) < > ACT 0 CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Write Cycle CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN NO PRE BANK 1 BANK m+2 D m+3 ...

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... IS42S16100E, IC42S16100E Write Cycle / Auto-Precharge CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Full Page CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 3, burst length = full page Note 1: A8,A9 = Don’t Care T259 (1) COLUMN NO PRE ...

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... IS42S16100E, IC42S16100E Write Cycle / Ping-Pong Operation (Bank Switching CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RRD (BANK RCD (BANK 0) t RAS (BANK (BANK 0) < > ACT 0 CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Read Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care (1) (1) COLUMN m COLUMN n NO PRE ...

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... IS42S16100E, IC42S16100E Read Cycle / Page Mode; Data Masking CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Write Cycle / Page Mode CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care (1) (1) COLUMN m COLUMN n NO PRE ...

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... IS42S16100E, IC42S16100E Write Cycle / Page Mode; Data Masking CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 t t BANK BANK 1 A11 BANK 0 BANK DQM RCD t RAS t RC < > < ACT WRIT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care. ...

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... IS42S16100E, IC42S16100E Read Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care CKS (1) COLUMN m AUTO PRE ...

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... IS42S16100E, IC42S16100E Write Cycle / Clock Suspend CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Read Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care (1) COLUMN m BANK PRE BANK 0 BANK 0 ...

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... IS42S16100E, IC42S16100E Write Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT 0 CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Read Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care (1) COLUMN m AUTO PRE ...

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... IS42S16100E, IC42S16100E Write Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S16100E, IC42S16100E Read Cycle, Write Cycle / Burst Read, Single Write CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM RAS t RC < > ACT CAS latency = 3, burst length = 2 Note 1: A8,A9 = Don’t Care (1) COLUMN m NO PRE ...

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... IS42S16100E-6BL 7 IS42S16100E-7T IS42S16100E-7TL IC42S16100E-7TL IS42S16100E-7B IS42S16100E-7BL Order Part No. 6 IS42S16100E-6TLI IS42S16100E-6BI IS42S16100E-6BLI 7 IS42S16100E-7TLI IS42S16100E-7BI IS42S16100E-7BLI Package 400-mil TSOP II 400-mil TSOP II, Lead-free 60-ball BGA 60-ball BGA, Lead-free 400-mil TSOP II 400-mil TSOP II, Lead-free 400-mil TSOP II, Lead-free 60-ball BGA 60-ball BGA, Lead-free 400-mil TSOP II ...

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PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II Millimeters Inches Symbol Min Max Min Ref. Std. No. Leads ( — 1.20 — A1 0.05 0.15 0.002 0.006 b 0.30 0.52 0.012 ...

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PACKAGING INFORMATION Mini Ball Grid Array Package Code: B (60-Ball SEATING PLANE mBGA - 10.1mm x 6.4mm ...