IS43R16800A-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16800A-5TL-TR Datasheet - Page 7

• Manufacturer Part Number: IS43R16800A-5TL-TR
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800A-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800A
AC ELECTRICAL CHARACTERISTICS (V
Notes:
1. Operating outside the “Absolute Maximum Ratings” may lead to temporary or permanent device failure.
2. Power up sequence describe in “Initialization” section.
3. All voltages are referenced to Vss.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
07/11/05
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CH
CL
HP
AC
DQSCK
DQSQ
QH
QHS
HZ
LZ
RPRE
RPST
DQSS
DSS
DSH
WPRES
WPRE
WPST
DQSH
DQSL
IH
IPW
DS
DH
RC
RFC
RAS
RCDRD
RCDWR
RP
RAP
RRD
WR
MRD
DAL
REF
IS
Parameter
Clock Cycle Time
Clock High Level Width
Clock Low Level Width
Clock Half Period
Output Access Time from CLK, CLK
DQS-Out Access Time from CLK, CLK
DQS-DQ Skew
Output DQS Valid Window
Data Hold Skew factor
Data Out High Impedance time from CLK, CLK
Data Out Low Impedance time from CLK, CLK
Read Preamble
Read Postamble
CLK to Valid DQS-In
DQS falling edge to CK setup time
DQS falling edge hold time from CLK
Write Preamble Setup Time
Write Preamble
Write Postamble
DQS-In High Level Pulse Width
DQS-In Low Level Pulse Width
Address and Control Input Setup Time
Address and Control Input Hold Time
Address and Control Input Pulse Width
DQ and DM Setup Time to DQS
DQ and DM Hold Time to DQS
Active to Active/ Auto Refresh Command Period
Auto Refresh to Active/ Auto Refresh Command Period
Active to Precharge Command Period
RAS to CAS Delay in Read
RAS to CAS Delay in Write
Row Pre-charge Time
Active to Auto Precharge delay
Row Active to Row Active Delay
Write Recovery Time
Mode Register Load Delay
Auto Pre-charge Write Recovery + Pre-charge
Refresh Interval Time
DD
= 2.6V +/- 0.1V, T
Test Condition
CL = 3
A
= 0
o
C to +70
t
WR
t
t
t
HP
RCD
/t
CH
CK
-0.55
Min.
0.45
0.45
0.72
0.25
0.35
0.35
-0.7
-0.7
0.9
0.4
0.2
0.2
0.4
0.6
0.6
2.2
0.4
0.4
—
—
—
60
70
40
18
18
18
10
15
—
- t
o
or t
5
0
2
+ t
C)
min.
-5 (3-4-4)
QHS
RP
CL
/t
CK
120K
Max.
0.55
0.55
0.55
1.28
15.6
0.7
0.4
0.5
0.7
0.7
1.1
0.6
0.6
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ISSI
Unit
t
t
t
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
®
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