IS43R16800A-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16800A-5TL-TR Datasheet - Page 31

• Manufacturer Part Number: IS43R16800A-5TL-TR
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800A-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
07/11/05
A Read command to the consecutive Write command interval with the BST command
1. Same
2. Same
3. Different
Command
Destination row of the consecutive write
command
Bank
address
DQS
/CK
DM
DQ
CK
Row address State
Same
Different
Any
READ
High-Z
t0
BST
ACTIVE
—
ACTIVE
IDLE
t1
tBSTW ( tBSTZ)
READ to WRITE Command Interval
t2
tBSTZ (= CL)
Operation
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued.
NOP
OUTPUT
t3
out0 out1
WRIT
t4
in0
t5
in1
in2
INPUT
t6
NOP
in3
t7
BL = 4
CL = 3
t8
ISSI
31
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