IS43R16800A-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16800A-5TL-TR Datasheet - Page 36

• Manufacturer Part Number: IS43R16800A-5TL-TR
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800A-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800A
36
A Write command to the consecutive Precharge command interval (same bank)
The minimum interval tWPD is necessary between the write command and the precharge command.
Precharge Termination in Write Cycles
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command
of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command
is issued, the invalid data must be masked by DM.
Command
Command
DQS
DQS
/CK
/CK
DM
DM
DQ
DQ
CK
CK
WRIT
WRIT
t0
t0
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)
Precharge Termination in Write Cycles (same bank) (BL = 4)
in0
in0
t1
t1
in1
in1
Last data input
Data masked
in2
in2
t2
t2
in3
in3
NOP
tWPD
NOP
t3
t3
tWR
Integrated Silicon Solution, Inc. — 1-800-379-4774
t4
t4
tWR
PRE/PALL
t5
t5
PRE/PALL
t6
t6
NOP
t7
t7
NOP
ISSI
Rev. 00A
07/11/05
®