CEG2288 CET [Chino-Excel Technology], CEG2288 Datasheet - Page 3

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CEG2288

Manufacturer Part Number
CEG2288
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
1500
1250
1000
750
500
250
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
8
6
4
2
0
0
-50
0
0
Figure 5. Gate Threshold Variation
C rss
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
, Junction Temperature( C)
V
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
GS
Figure 3. Capacitance
0
with Temperature
=4.5,3.5,2.5V
25
1
10
50
75
15
C iss
C oss
2
100
V
V
GS
GS
20
=2.0V
=1.5V
125
150
25
3
3
10
10
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
1
0
-1
-100
Figure 6. Body Diode Forward Voltage
0.4
V
0
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=6.2
V
, Body Diode Forward Voltage (V)
T
=4.5V
GS
-50
J
, Junction Temperature( C)
T
0.6
J
0.5
, Gate-to-Source Voltage (V)
=125 C
with Temperature
0
CEG2288
0.8
50
1.0
1.0
-55 C
100
25 C
1.5
1.2
150
2.0
200
1.4

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