CEM9926A_10 CET [Chino-Excel Technology], CEM9926A_10 Datasheet

no-image

CEM9926A_10

Manufacturer Part Number
CEM9926A_10
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
Details are subject to change without notice .
FEATURES
ABSOLUTE MAXIMUM RATINGS
Dual N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
20V, 6A, R
Super high dense cell design for extremely low R
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
= 27mΩ @V
= 40mΩ @V
Parameter
Parameter
a
GS
GS
= 4.5V.
= 2.5V.
b
SO-8
DS(ON)
T
A
.
= 25 C unless otherwise noted
1
1
Symbol
Symbol
T
R
V
V
J
I
P
I
DM
,T
DS
GS
θJA
D
D
stg
CEM9926A
-55 to 150
D
S
8
1
Limit
Limit
1
1
62.5
±
2.0
20
35
6
12
D
G
7
2
1
1
http://www.cetsemi.com
D
6
S
3
2
2
Rev 4.
D
G
5
4
2
2
Units
Units
2010.Dec
C/W
W
V
V
A
A
C

Related parts for CEM9926A_10

CEM9926A_10 Summary of contents

Page 1

Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A 27mΩ @V DS(ON 40mΩ @V DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Lead free product is acquired. ...

Page 2

Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse ...

Page 3

V =4.5,3.5,2. 0.0 0.5 1.0 1.5 2 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 900 750 C iss 600 450 300 C oss 150 C rss ...

Page 4

V =10V DS I =4. Qg, Total Gate Charge (nC) Figure 7. Gate Charge GEN G S Figure 9. Switching ...

Related keywords