CEM4301_10 CET [Chino-Excel Technology], CEM4301_10 Datasheet
CEM4301_10
Manufacturer Part Number
CEM4301_10
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
1.CEM4301_10.pdf
(4 pages)
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
P-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
-40V, -6A, R
Super high dense cell design for extremely low R
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
= 42mΩ @V
= 65mΩ @V
Parameter
Parameter
a
GS
GS
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
.
= 25 C unless otherwise noted
1
1
Symbol
Symbol
T
R
V
V
J
I
P
I
DM
,T
DS
GS
θJA
D
D
stg
-55 to 150
D
8
1
S
Limit
Limit
±
-40
-20
2.5
50
-6
CEM4301
20
D
7
S
2
http://www.cetsemi.com
D
S
6
3
Rev 2.
G
D
5
4
Units
Units
2010.Aug
C/W
W
V
V
A
A
C
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CEM4301_10 Summary of contents
Page 1
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6A 42mΩ @V DS(ON 65mΩ @V DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Lead free product is acquired. Surface ...
Page 2
Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output ...
Page 3
Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1500 1250 C iss 1000 750 500 C oss 250 C rss ...
Page 4
V =-20V Qg, Total Gate Charge (nC) Figure 7. Gate Charge GEN G S Figure 9. ...