CEM9407A_10 CET [Chino-Excel Technology], CEM9407A_10 Datasheet

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CEM9407A_10

Manufacturer Part Number
CEM9407A_10
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
P-Channel Enhancement Mode Field Effect Transistor
Specification and data are subject to change without notice .
Lead free product is acquired.
-60V, -3.7A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
DS(ON)
DS(ON)
Parameter
Parameter
= 125mΩ @V
= 165mΩ @V
a
GS
GS
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T A = 25 C unless otherwise noted
.
1
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
θJA
D
D
stg
CEM9407A
-55 to 150
D
8
1
S
Limit
Limit
-14.8
±
-3.7
-60
2.5
50
20
D
7
S
2
http://www.cetsemi.com
D
S
6
3
Rev 4.
G
D
5
4
PRELIMINARY
2010.Mar.
Units
Units
C/W
W
V
V
A
A
C
5

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CEM9407A_10 Summary of contents

Page 1

P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -3.7A 125mΩ @V DS(ON 165mΩ @V DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Lead free product is acquired. Surface ...

Page 2

P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics d Input Capacitance ...

Page 3

=3. Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1200 1000 800 C iss 600 400 C oss 200 C rss 0 ...

Page 4

V =-30V DS I =-3. Qg, Total Gate Charge (nC) Figure 7. Gate Charge GEN G S Figure 9. Switching ...

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