CEG2288 CET [Chino-Excel Technology], CEG2288 Datasheet
CEG2288
Manufacturer Part Number
CEG2288
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
1.CEG2288.pdf
(4 pages)
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
Dual N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
20V, 6.2A, R
Super High dense cell design for extremely low R
TSSOP-8 Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
Parameter
Parameter
= 24m
= 34m
a
@V
@V
GS
GS
= 4.5V.
= 2.5V.
D
b
S
S
2
G
2
2
TSSOP-8
DS(ON)
T
A
= 25 C unless otherwise noted
.
1
Symbol
Symbol
T
D
R
V
V
J
S
I
P
S
1
I
DM
,T
G
1
DS
GS
D
D
1
JA
stg
D
S
S
G
1
1
1
1
2
3
4
-55 to 150
Limit
Limit
1.25
100
6.2
20
25
CEG2288
12
http://www.cetsemi.com
Rev 1.
7
5
8
6
2006.June
Units
Units
D
S
S
G
C/W
2
2
2
W
V
V
A
A
C
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CEG2288 Summary of contents
Page 1
... TSSOP unless otherwise noted A Symbol stg Symbol CEG2288 Limit 20 12 6.2 25 1.25 -55 to 150 Limit 100 Rev 1. http://www.cetsemi.com ...
Page 2
... 5V GEN t d(off 10V 6. CEG2288 Min Typ Max Units µ 100 -100 nA 0.5 1 835 pF 125 10 3 ...
Page 3
... T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature 10 =2.0V =1.5V 3 1.8 1.6 1.4 1.2 1.0 0.8 0 125 150 3 CEG2288 =125 0.5 1.0 1 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =6 =4.5V GS -100 - 100 150 T , Junction Temperature Figure 4 ...
Page 4
... d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 10. Switching Waveforms - CEG2288 Limit 1ms 10ms 100ms Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area t off t r d(off 90% INVERTED 10% 90% 50% ...