CEB6056 CET [Chino-Excel Technology], CEB6056 Datasheet

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CEB6056

Manufacturer Part Number
CEB6056
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
This is preliminary information on a new product in development now .
Details are subject to change without notice .
N-Channel Enhancement Mode Field Effect Transistor
60V, 100A, R
Super high dense cell design for extremely low R
TO-220 & TO-263 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
Lead free product is acquired.
DS(ON)
Parameter
Parameter
= 6.2mΩ @V
a
- Derate above 25 C
CEB SERIES
TO-263(DD-PAK)
d
C
d
GS
= 25 C
= 10V.
DS(ON)
CEP SERIES
TO-220
T c = 25 C unless otherwise noted
CEP6056/CEB6056
.
1
Symbol
Symbol
T
R
R
V
V
E
J
I
P
I
I
DM
,T
AS
DS
GS
θJC
θJA
D
AS
D
stg
G
-55 to 175
Limit
Limit
0.66
62.5
±
100
360
100
160
1.5
60
80
20
D
S
http://www.cetsemi.com
Rev 1.
PRELIMINARY
2010.March
Units
Units
W/ C
C/W
C/W
mJ
W
V
V
A
A
A
C

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CEB6056 Summary of contents

Page 1

... Single Pulsed Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient This is preliminary information on a new product in development now . Details are subject to change without notice . CEP6056/CEB6056 = 10V DS(ON) CEP SERIES TO-220 unless otherwise noted ...

Page 2

... Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 50µ 80A 24V 25Ω, Starting CEP6056/CEB6056 unless otherwise noted Symbol Test Condition 0V, I DSS GS D ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP6056/CEB6056 140 105 2.6 2.2 1.8 1.4 1.0 0.6 0 125 150 =125 ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Figure 11. Normalized Thermal Transient Impedance Curve CEP6056/CEB6056 d(on) V OUT V OUT V IN 10% Figure 10. Switching Waveforms Square Wave Pulse Duration (msec Limit 10 DS(ON) 100ms 2 10 ...

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