CEB62A3 CET [Chino-Excel Technology], CEB62A3 Datasheet

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CEB62A3

Manufacturer Part Number
CEB62A3
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
N-Channel Logic Level Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
THERMAL CHARACTERISTICS
FEATURES
30V , 60A , R
Super high dense cell design for extremely low R
High power and current handling capability.
TO-220 & TO-263 package.
Gate-Source Voltage
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current-Continuous
R
Parameter
DS(ON)
DS(ON)
-Pulsed
=10m
=15m
Derate above 25 C
CEB SERIES
TO-263(DD-PAK)
@V
@V
@Tc=25 C
GS
GS
CEP62A3/CEB62A3
=10V.
=4.5V.
4-177
CEP SERIES
TO-220
T
Symbol
DS(ON)
J
R
R
V
, T
V
I
P
DM
I
GS
I
DS
D
S
D
STG
JC
JA
.
-55 to 175
G
Limit
0.45
62.5
180
2.2
60
30
20
60
68
Feb. 2003
D
S
Unit
W/ C
C
C
W
V
V
A
A
A
C
/W
/W
4
4

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CEB62A3 Summary of contents

Page 1

... Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Derate above 25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient CEP62A3/CEB62A3 =10V. GS =4.5V DS(ON) CEP SERIES TO-220 Symbol V DS ...

Page 2

... CEP62A3/CEB62A3 ELECTRICAL CHARACTERISTICS (T 4 Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1800 1500 1200 900 600 300 Drain-to Source Voltage (V) DS Figure 3. Capacitance CEP62A3/CEB62A3 =25 C unless otherwise noted) C Condition Symbol 0V, Is =26A Tj=125 ...

Page 4

... CEP62A3/CEB62A3 1.30 1.20 4 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 10 V =15V DS I =30A Qg, Total Gate Charge (nC) Figure 9. Gate Charge =250 A ...

Page 5

... CEP62A3/CEB62A3 GEN G S Figure 11. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve d(on) V OUT V OUT 10% 50 10% PULSE WIDTH Figure 12. Switching Waveforms ...

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