CEG2288 CET [Chino-Excel Technology], CEG2288 Datasheet - Page 2

• Manufacturer Part Number: CEG2288
• Description: Dual N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
T
A
= 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
g
I
GSSF
Q
GSSR
I
DSS
t
t
SD
oss
FS
iss
rss
S
r
gd
f
gs
DSS
g
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 20V, V
= 12V, V
= -12V, V
= V
= 4.5V, I
= 2.5V, I
= 5V, I
= 10V, V
= 10V, I
= 5V, R
= 10V, I
= 4.5V
= 0V, I
DS
, I
D
D
S
GEN
D
D
D
= 250 µ A
D
D
= 6.2A
= 1A
GS
GS
DS
DS
= 6.2A,
= 250 µ A
= 6.2A,
= 6.2A
= 5.5A
= 0V
= 0V,
= 3
= 0V
= 0V
Min
20
0.5
CEG2288
10.7
25.3
Typ
835
125
3.8
2.8
8.2
1.0
1.9
19
25
17
95
-100
Max
100
1.0
6.2
1.2
24
34
27
10
63
1
7
Units
m
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
8