CED3060 CET [Chino-Excel Technology], CED3060 Datasheet

no-image

CED3060

Manufacturer Part Number
CED3060
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
30V, 75A , R
Super high dense cell design for extremely low R
TO-251 & TO-252 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
Parameter
Parameter
= 6.6mΩ @V
= 9.5mΩ @V
a
- Derate above 25 C
CEU SERIES
TO-252(D-PAK)
G
S
C
GS
GS
= 25 C
= 10V.
= 4.5V.
D
DS(ON)
CED SERIES
TO-251(I-PAK)
T c = 25 C unless otherwise noted
CED3060/CEU3060
.
1
Symbol
Symbol
T
R
R
V
V
J
I
P
I
DM
,T
DS
GS
θJC
θJA
D
D
stg
G
-55 to 150
Limit
Limit
62.5
±
300
0.5
2.0
30
75
50
20
D
http://www.cetsemi.com
S
Rev 2.
Units
Units
W/ C
2007.Oct.
C/W
C/W
W
V
V
A
A
C

Related parts for CED3060

CED3060 Summary of contents

Page 1

... Drain Current-Pulsed a Maximum Power Dissipation @ T - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice . CED3060/CEU3060 = 10V 4.5V DS(ON) D CED SERIES TO-251(I-PAK unless otherwise noted ...

Page 2

... Drain-Source Diode Forward Voltage Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. CED3060/CEU3060 unless otherwise noted A Symbol Test Condition ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CED3060/CEU3060 100 2.2 1.9 1.6 1.3 1.0 0.7 0 125 150 - =125 Gate-to-Source Voltage (V) GS Figure 2 ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 -1 0.1 10 0.05 0.02 0.01 Single Pulse - Figure 11. Normalized Thermal Transient Impedance Curve CED3060/CEU3060 d(on) V OUT V OUT V IN 10% Figure 10. Switching Waveforms - Square Wave Pulse Duration (sec Limit ...

Related keywords