CEM4269_10 CET [Chino-Excel Technology], CEM4269_10 Datasheet
CEM4269_10
Related parts for CEM4269_10
CEM4269_10 Summary of contents
Page 1
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V, 6.1A 32mΩ @V DS(ON 46mΩ @V DS(ON) -40V, -5.2A 43mΩ @V DS(ON 65mΩ @V DS(ON) Super high dense cell design ...
Page 2
N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics d Input Capacitance ...
Page 3
P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics d Input Capacitance ...
Page 4
N-CHANNEL 30 V =10, Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 1500 1250 C iss 1000 750 500 C oss 250 C rss ...
Page 5
P-CHANNEL 30 -V =10,6, Drain-to-Source Voltage (V) DS Figure 7. Output Characteristics 1500 1250 C iss 1000 750 500 C oss 250 C rss ...
Page 6
N-CHANNEL 10 V =20V Qg, Total Gate Charge (nC) Figure 13. Gate Charge P-CHANNEL 10 V =-20V ...
Page 7
GEN G S Figure 17. Switching Test Circuit 0 10 D=0.5 0 0.1 0.05 0.02 0. Single Pulse - Figure 19. ...