CEU730G CET [Chino-Excel Technology], CEU730G Datasheet

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CEU730G

Manufacturer Part Number
CEU730G
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
N-Channel Enhancement Mode Field Effect Transistor
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Lead free product is acquired.
400V, 5A, R
Super high dense cell design for extremely low R
TO-251 & TO-252 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
DS(ON)
= 1Ω @V
Parameter
Parameter
a
- Derate above 25 C
CEU SERIES
TO-252(D-PAK)
G
GS
S
= 10V.
C
= 25 C
D
DS(ON)
CED SERIES
TO-251(I-PAK)
CED730G/CEU730G
T c = 25 C unless otherwise noted
.
1
Symbol
Symbol
T
R
R
V
V
J
I
P
I
DM
,T
DS
GS
θJC
θJA
D
D
stg
G
-55 to 150
Limit
Limit
0.54
±
400
2.2
20
68
50
5
30
D
S
http://www.cetsemi.com
Rev 1.
PRELIMINARY
Units
Units
2009.Nov
W/ C
C/W
C/W
W
V
V
A
A
C

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CEU730G Summary of contents

Page 1

... Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient This is preliminary information on a new product in development now . Details are subject to change without notice . CED730G/CEU730G = 10V. . DS(ON) D CED SERIES TO-251(I-PAK unless otherwise noted ...

Page 2

... Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . . CED730G/CEU730G unless otherwise noted Symbol Test Condition 0V 250 µ ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CED730G/CEU730G 2.2 1.9 1.6 1.3 1.0 0.7 0 125 150 =125C J - ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CED730G/CEU730G DS(ON = =150 C J Single Pulse - Figure 8. Maximum Safe ...

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