HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 8

• Manufacturer Part Number: HYB18M512160BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
• Manufacturer: QIMONDA [Qimonda AG]

2.2
Table 5
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
5) DESELECT or NOP commands should be issued on any clock edges occurring during
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
Internet Data Sheet
CKEn-1
H
H
L
L
CKEn
Function Truth Tables
Truth Table - CKE
H
H
L
L
Deep Power-Down
Deep Power-Down
Bank(s) Active
Current State
All Banks Idle
All Banks Idle
All Banks Idle
Power-Down
Power-Down
Self Refresh
Self Refresh
BURST TERMINATE
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
AUTO REFRESH
see
Command
Table 6
X
X
X
X
8
and
Table 7
Action
Maintain Power-Down
Maintain Self Refresh
Maintain Deep Power-Down
Exit Power-Down
Exit Self Refresh
Exit Deep Power-Down
Enter Precharge Power-Down
Enter Active Power-Down
Enter Self Refresh
Enter Deep Power-Down
512-Mbit DDR Mobile-RAM
t
XP
HY[B/E]18M512160BF
or
t
XSR
Functional Description
07092007-3E44-UTNM
period.
Rev.1.80, 2006-11
Notes
1)2)3)4)
1) to 4)
1) to 4)
1) to 5)
1) to 5)
1) to 4), 6)
1) to 4)
1) to 4)
1) to 4)
1) to 4)
1) to 4)