HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 3

• Manufacturer Part Number: HYB18M512160BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
• Manufacturer: QIMONDA [Qimonda AG]

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Power Saving Features
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Table 1
Part Number Speed Code
Clock Frequency (
Access Time (
Table 2
Item
Banks
Rows
Columns
1)RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and
electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council
of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated
biphenyls and polybrominated biphenyl ethers.
Internet Data Sheet
4 banks
Double-data-rate architecture : two data transfers per clock cycle
Bidirectional data strobe (DQS) is transmitted / received with data; to be used in capturing data at the receiver
DQS is edge-aligned with data for READs and center-aligned with data for WRITEs
Differential clock input (CK / CK)
Commands entered on positive CK edge; data and mask data are referenced to both edges of DQS
Four internal banks for concurrent operation
Programmable CAS latency: 2 and 3
Programmable burst length: 2, 4, 8 and 16
Programmable drive strength (full, half, quarter)
Auto refresh and self refresh modes
8192 refresh cycles / 64ms
Auto precharge
Commercial (0°C to +70°C) and Extended (-25
60-ball Very Thin FBGA package (10.5
RoHS Compliant Product
Low supply voltages:
Optimized operating (
DDR I/O scheme with no DLL
Programmable Partial Array Self Refresh (PASR)
Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
Clock Stop, Power-Down and Deep Power-Down modes
Overview
Features
Performance
Memory Addressing Scheme
8 Mbit
t
ACmax
f
CKmax
)
16 organization
)
V
I
DD0
DD
1)
= 1.70 V
,
I
DD4
), self refresh (
1.90 V,
10.5
CL = 3
CL = 2
V
I
DDQ
o
DD6
C to +85
1.0 mm)
) and standby currents (
= 1.70 V
3
Addresses
BA0, BA1
A0 - A12
A0 - A9
o
C) operating temperature range
1.90 V
166
5.5
- 6
83
I
DD2
512-Mbit DDR Mobile-RAM
,
I
DD3
HY[B/E]18M512160BF
- 7.5
133
6.5
66
)
07092007-3E44-UTNM
Rev.1.80, 2006-11
MHz
MHz
Unit
ns
Overview