HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 13

• Manufacturer Part Number: HYB18M512160BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
• Manufacturer: QIMONDA [Qimonda AG]

Table 10
Parameter
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input leakage current
Output leakage current
Address and Command Inputs (BA0, BA1, A0 - A12, CKE, CS, RAS, CAS, WE)
Input high voltage
Input low voltage
Clock Inputs (CK, CK)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
Data Inputs (DQ0 - DQ15, LDM, UDM, LDQS, UDQS)
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data Outputs (DQ0 - DQ15, LDQS, UDQS)
Output high voltage
Output low voltage
1) 0 C
2) See
3) V
4) The value of V
Internet Data Sheet
All voltages referenced to
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
Table 13
T
C
Electrical Characteristics
70 C (comm.); -25 C
and
IX
is expected to be equal to 0.5 x
Figure 3
V
SS
for overshoot and undershoot definition.
.
V
SS
and
T
C
V
1)2)
SSQ
85 C (ext.);
must be at same potential.
V
DDQ
and must track variations in the DC level.
Symbol
V
V
V
V
V
V
13
V
IHD(DC)
IHD(AC)
ILD(DC)
ILD(AC)
V
V
V
ID(DC)
ID(AC)
I
V
V
V
V
I
DDQ
OL
DD
OH
OL
IL
IH
IN
IL
IX
0.8
0.4
0.6
0.4
0.7
0.8
0.9
min.
1.70
1.70
-1.0
-1.5
-0.3
-0.3
-0.3
-0.3
–
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Values
512-Mbit DDR Mobile-RAM
V
0.2
V
V
V
0.6
V
0.3 x V
V
0.2
0.1
HY[B/E]18M512160BF
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Electrical Characteristics
max.
1.90
1.90
1.0
1.5
–
+ 0.3
+ 0.3
+ 0.6
+ 0.6
+ 0.3
+ 0.3
V
V
V
V
07092007-3E44-UTNM
DDQ
DDQ
DDQ
DDQ
DDQ
Rev.1.80, 2006-11
Unit Notes
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
–
–
–
–
–
–
–
3)
3)
4)
–
–
–
–
–
–