HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 10

• Manufacturer Part Number: HYB18M512160BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
• Manufacturer: QIMONDA [Qimonda AG]

6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle and no bursts are in progress.
8) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
9) May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
10) A WRITE command may be applied after the completion of the Read burst; otherwise, a BURST TERMINATE command
11) Not bank-specific; BURST TERMINATE affects the most recent Read burst, regardless of bank.
12) Requires appropriate DM masking.
Table 7
Current State
Any
Idle
Row Activating,
Active, or
Precharging
Read (Auto-
Precharge
Disabled)
Write (Auto-
Precharge
Disabled)
Read
(with Auto-
Precharge)
Write
(with Auto-
Precharge)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH (see
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
Internet Data Sheet
or Writes with Auto Precharge disabled.
must be used to end the Read burst prior to issuing a WRITE command.
previous state was power-down or self refresh).
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
Current State Bank n - Command to Bank m (different bank)
CS
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS CAS WE Command / Action
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
DESELECT (NOP / continue previous operation)
NO OPERATION (NOP / continue previous operation)
Any command otherwise allowed to bank m
ACTIVE (select and activate row)
READ (select column and start Read burst)
WRITE (select column and start Write burst)
PRECHARGE (Deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (truncate Read and start new Read burst)
WRITE (truncate Read and start Write burst)
PRECHARGE (Deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (truncate Write and start Read burst)
WRITE (truncate Write and start new Write burst)
PRECHARGE (Deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (truncate Read and start new Read burst)
WRITE (truncate Read and start Write burst)
PRECHARGE (deactivate row in bank or banks)
ACTIVE (select and activate row)
READ (truncate Write and start Read burst)
WRITE (truncate Write and start new Write burst)
PRECHARGE (Deactivate row in bank or banks)
10
Table
5) and after
512-Mbit DDR Mobile-RAM
t
XP
HY[B/E]18M512160BF
or
t
Functional Description
XSR
07092007-3E44-UTNM
has been met (if the
Rev.1.80, 2006-11
Notes
1)2)3)4)5)6)
1) to 6)
1) to 6)
1) to 6)
1) to 7)
1) to 7)
1) to 6)
1) to 6)
1) to 7)
1) to 8)
1) to 6)
1) to 6)
1) to 7), 9)
1) to 7)
1) to 6)
1) to 6)
1) to 7)
1) to 8)
1) to 6)
1) to 6)
1) to 7)
1) to 7)
1) to 6)