HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 16

• Manufacturer Part Number: HYB18M512160BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
• Manufacturer: QIMONDA [Qimonda AG]

21) A low level on DQS may be maintained during High-Z states (DQS drivers disabled) by adding a weak pull-down element
22) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
23) t
24) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the
Table 12
Parameter
Pullup and Pulldown Slew Rate
(Full Drive Buffer)
Pullup and Pulldown Slew Rate
(Half Drive Buffer)
Output Slew Rate Matching Ratio
(Pullup to Pulldown)
1) Output slew rate is measured between
2) The parameter is measured using a 20pF capacitive load connected to VSSQ
3) The ratio of the pullup slew rate to the pulldown slew rate is specified for the same temperature and voltage, over the entire
Table 13
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
Maximum undershoot area below VSS
Figure 3
Internet Data Sheet
in the system. It is recommended to turn off the weak pull-down element during read and write bursts (DQS drivers
enabled).
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
maximum absolute interval between any Refresh command and the next Refresh command is 8 * tREFI.
temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown
drivers due to process variation.
DAL
= (t
WR
Output Slew Rate Characteristics
AC Overshoot / Undershoot Specification
AC Overshoot and Undershoot Definition
/ t
CK
) + (t
RP
/ t
CK
): for each of the terms above, if not already an integer, round to the next higher integer.
V
ILD(DC)
and
Typical Range
1)
V
IHD(AC)
TBD
TBD
-
16
(rising) or
V
Minimum
IHD(DC)
0.7
0.3
0.7
and
.
V
512-Mbit DDR Mobile-RAM
ILD(AC)
Maximum
Maximum
(falling).
HY[B/E]18M512160BF
Electrical Characteristics
2.5
1.0
1.4
0.9
0.9
3.0
3.0
07092007-3E44-UTNM
Rev.1.80, 2006-11
Unit
V/ns
V/ns
-
Unit
V
V
V-ns
V-ns
2)
2)
3)
Notes
–
–
–
–
Notes