W9751G6KB WINBOND [Winbond], W9751G6KB Datasheet - Page 38

• Manufacturer Part Number: W9751G6KB
• Description: 8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
• Manufacturer: WINBOND [Winbond]

9.4
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 Ω
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 Ω
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 Ω
Deviation of V
Notes:
1. Test condition for Rtt measurements.
2. Optional for DDR2-667, mandatory for DDR2-800 and DDR2-1066.
Measurement Definition for Rtt(eff):
Apply V
respectively. V
Measurement Definition for ΔV
Measure voltage (V
9.5
DC input logic HIGH
DC input logic LOW
9.6
AC input logic HIGH
AC input logic LOW
Note:
1. Refer to the page 67 sections 9.14.1 and 9.14.2 AC Overshoot/Undershoot specification table for V
PARAMETER
PARAMETER
peak amplitude allowed for Overshoot/Undershoot.
ODT DC Electrical Characteristics
Input DC Logic Level
Input AC Logic Level
IH (ac)
M
PARAMETER/CONDITION
with respect to V
IH (ac)
and V
M
, V
) at test pin (midpoint) with no load.
IL (ac)
V
V
V
V
IL (ac)
SYM.
SYM.
IH (ac)
IL (ac)
IH(dc)
IL(dc)
DDQ
, and V
Rtt(eff) = (V
to test pin separately, then measure current I(V
/2
V
M
ΔV
REF
:
DDQ
MIN.
M
+ 0.200

= ((2 x V
values defined in SSTL_18.
IH(ac)
V
REF
MIN.
-18
-0.3
– V
+ 0.125
m
V
IL(ac)
/ V
REF
- 38 -
MAX.
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
DDQ
SYM.
ΔV

- 0.200
) /(I(V
M
) – 1) x 100%
IHac)
MIN.
120
60
40
-6
V
V
SSQ
– I(V
REF
Publication Release Date: Dec. 09, 2011
MIN.
- V
NOM.
+ 0.200
ILac)
150
75
50
PEAK
)
V
-25/25I/-3
V
REF
DDQ
1
MAX.
MAX.
180
90
60
+6
- 0.125
W9751G6KB
+ 0.3
V
IH (ac)
DDQ
V
PEAK
REF
MAX.
UNIT
+ V
) and I(V
value: maximum
%
Ω
Ω
Ω
- 0.200
PEAK
Revision A01
NOTES
1
1, 2
1
1
1
IL (ac)
UNIT
UNIT
V
V
V
V
)