MC68HC908JK3EMP MOTOROLA [Motorola, Inc], MC68HC908JK3EMP Datasheet - Page 45
MC68HC908JK3EMP
Manufacturer Part Number
MC68HC908JK3EMP
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908JK3EMP.pdf
(226 pages)
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4.4 FLASH Control Register
MC68H(R)C908JL3E/JK3E/JK1E
MOTOROLA
Address:
The FLASH Control Register controls FLASH program and erase
operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Reset:
Read:
Write:
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM=1 or ERASE=1 and the proper sequence for program or
erase is followed.
This read/write bit configures the memory for mass erase operation or
page erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
—
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Rev. 2.0
$FE08
Bit 7
0
0
Figure 4-2. FLASH Control Register (FLCR)
FLASH Memory (FLASH)
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
FLASH Memory (FLASH)
2
0
FLASH Control Register
ERASE
1
0
Technical Data
PGM
Bit 0
0
45
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