MC68HC908JK3EMP MOTOROLA [Motorola, Inc], MC68HC908JK3EMP Datasheet - Page 209

• Manufacturer Part Number: MC68HC908JK3EMP
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

18.14 Memory Characteristics
MC68H(R)C908JL3E/JK3E/JK1E
MOTOROLA
NOTES:
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
FLASH memory.
the FLASH memory.
by clearing HVEN to logic 0.
t
this many erase / program cycles.
this many erase / program cycles.
time specified.
rcv
Read
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(8)
Table 18-11. Memory Characteristics
—
(6)
Rev. 2.0
nvs
(7)
+ t
Erase
nvh
MErase
Electrical Specifications
+ t
(Min), there is no erase-disturb, but it reduces the endurance of the
pgs
(Min), there is no erase-disturb, but it reduces the endurance of
+ (t
PROG
×
32) ≤ t
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
PROG
t
HV
rcv
t
t
t
nvh1
HV
RDR
pgs
—
nvs
nvh
—
—
—
(4)
(5)
(1)
max.
(2)
(3)
Min
32k
100
10k
10k
1.3
10
30
10
—
1
1
4
5
5
1
Electrical Specifications
Memory Characteristics
Max
8M
40
—
—
—
—
—
—
—
—
—
—
—
—
4
Technical Data
cycles
cycles
years
MHz
Unit
ms
ms
ms
Hz
µ s
µ s
µ s
µ s
µ s
µ s
V
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