CY7C1471BV33_11 CYPRESS [Cypress Semiconductor], CY7C1471BV33_11 Datasheet - Page 23

• Manufacturer Part Number: CY7C1471BV33_11
• Description: 72-Mbit (2 M x 36/4 M x 18/1 M x 72) Flow-Through SRAM with NoBL Architecture
• Manufacturer: CYPRESS [Cypress Semiconductor]

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with power applied . –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to
outputs in tri-state ..............................–0.5 V to V
DC input voltage .................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-15029 Rev. *E
V
V
V
V
V
V
I
I
I
I
I
I
15. Overshoot: V
16. T
17. The operation current is calculated with 50% read cycle and 50% write cycle.
Parameter
X
OZ
DD
SB1
SB2
SB3
DD
DDQ
OH
OL
IH
IL
[17]
Power-up
: assumes a linear ramp from 0 V to V
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current except
ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
IH
DD
(AC) < V
operating supply current V
DD
DDQ
Description
DD
relative to GND ........–0.5 V to +4.6 V
+1.5 V (pulse width less than t
relative to GND....... –0.5 V to +V
[15, 16]
[15]
[15]
DD
(min.) within 200 ms. During this time V
For 3.3 V I/O
For 2.5 V I/O
For 3.3 V I/O, I
For 2.5 V I/O, I
For 3.3 V I/O, I
For 2.5 V I/O, I
For 3.3 V I/O
For 2.5 V I/O
For 3.3 V I/O
For 2.5 V I/O
GND ≤ V
Input = V
Input = V
Input = V
Input = V
GND ≤ V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
DD
DD
IN
DD
IN
DD
IN
MAX
MAX
MAX
≥ V
≤ 0.3 V or V
≤ 0.3 V or V
= Max., I
= Max, device deselected,
= Max, device deselected,
= Max, device deselected, or
CYC
DDQ
CY7C1471BV33, CY7C1473BV33, CY7C1475BV33
DD
IH
, inputs switching
, inputs switching
/2). Undershoot: V
= 1/t
I
I
SS
DD
SS
DD
or V
+ 0.5 V
+ 0.5 V
≤ V
≤ V
CYC
OUT
DDQ
DD,
IN
DD
OH
OH
OL
OL
IN
IN
≤ V
output disabled
= 8.0 mA
= 1.0 mA
= 0 mA,
= –4.0 mA
= –1.0 mA
> V
> V
IL
Test Conditions
DDQ
DD
IL
(AC) > –2 V (pulse width less than t
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage........................................... >2001 V
(MIL-STD-883, Method 3015)
Latch-up current ..................................................... >200 mA
Operating Range
– 0.3 V,
Commercial
Industrial
– 0.3 V
Range
IH
< V
All speeds
DD
7.5 ns cycle, 133 MHz
10 ns cycle, 117 MHz
7.5 ns cycle, 133 MHz
10 ns cycle, 117 MHz
7.5 ns cycle, 133 MHz
10 ns cycle, 117 MHz
and V
–40 °C to +85 °C
0 °C to +70 °C 3.3 V –5%/+10% 2.5 V – 5%
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
–
V
DD
V
V
DD
DD
2.625
Max
V
305
200
200
275
200
120
200
3.6
0.4
0.4
0.8
0.7
30
Page 23 of 35
+ 0.3 V
+ 0.3 V
–
–
5
–
5
–
5
DD
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
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