CY7C1471BV33_11 CYPRESS [Cypress Semiconductor], CY7C1471BV33_11 Datasheet

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CY7C1471BV33_11

Manufacturer Part Number
CY7C1471BV33_11
Description
72-Mbit (2 M x 36/4 M x 18/1 M x 72) Flow-Through SRAM with NoBL Architecture
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1471BV33_11CY7C1471BV33-117AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Selection Guide
Cypress Semiconductor Corporation
Document Number: 001-15029 Rev. *E
Maximum access time
Maximum operating current
Maximum CMOS standby current
No bus latency™ (NoBL™) architecture eliminates dead cycles
between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte write capability
3.3 V/2.5 V I/O supply (V
Fast clock-to-output times
Clock enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous output enable (OE)
CY7C1471BV33, CY7C1473BV33 available in
JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP),
Pb-free and non-Pb-free 165-ball fine-pitch ball grid array
(FBGA) package. CY7C1475BV33 available in Pb-free and
non-Pb-free 209-ball FBGA package
Three chip enables (CE
expansion
Automatic power-down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG boundary scan compatible
Burst capability—linear or interleaved burst order
Low standby power
6.5 ns (for 133 MHz device)
1
DDQ
, CE
Description
)
2
, CE
3
) for simple depth
198 Champion Court
CY7C1471BV33, CY7C1473BV33, CY7C1475BV33
72-Mbit (2 M × 36/4 M × 18/1 M × 72)
Functional Description
The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33
are 3.3 V, 2M × 36/4M × 18/1M × 72 synchronous flow through
burst SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471BV33, CY7C1473BV33, and
CY7C1475BV33 are equipped with the advanced No Bus
Latency (NoBL) logic. NoBL™ is required to enable consecutive
read or write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput of
data through the SRAM, especially in systems that require
frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133 MHz device).
Write operations are controlled by two or four Byte Write Select
(BW
with on-chip synchronous self timed write circuitry.
Three synchronous chip enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
X
133 MHz
) and a Write Enable (WE) input. All writes are conducted
305
120
6.5
Flow-Through SRAM with
San Jose
NoBL™ Architecture
,
CA 95134-1709
117 MHz
275
120
8.5
1
, CE
Revised June 30, 2011
2
, CE
3
) and an
408-943-2600
Unit
mA
mA
ns
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CY7C1471BV33_11 Summary of contents

Page 1

Features ■ No bus latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles ■ Supports up to 133 MHz bus operations with zero wait states ■ Data is transferred on every clock ■ Pin compatible and functionally equivalent ...

Page 2

Logic Block Diagram – CY7C1471BV33 (2 M × 36) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN WRITE ADDRESS ADV/ READ LOGIC CE1 CE2 CE3 SLEEP ZZ CONTROL ...

Page 3

Logic Block Diagram – CY7C1475BV33 (1 M × 72) ADDRESS A0, A1, A REGISTER 0 MODE CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ AND DATA COHERENCY ...

Page 4

Contents Pin Configuration ............................................................. 5 Pin Definitions .................................................................. 9 Functional Overview ...................................................... 10 Single Read Accesses .............................................. 10 Burst Read Accesses ................................................ 10 Single Write Accesses ............................................... 11 Burst Write Accesses ................................................ 11 Sleep Mode ............................................................... 11 Interleaved Burst Address ...

Page 5

Pin Configuration Figure 1. 100-pin TQFP Pinout – CY7C1471BV33 (2 M × 36) DQP DDQ BYTE ...

Page 6

Pin Configuration (continued) Figure 2. 100-pin TQFP Pinout – CY7C1473BV33 (4 M × 18 DDQ ...

Page 7

Pin Configuration (continued) 165-ball FBGA (15 × 17 × 1.4 mm) Pinout NC/576M NC/1G CE2 A C DQP DDQ DDQ ...

Page 8

Pin Configuration (continued) 209-ball FBGA (14 × 22 × 1.76 mm) Pinout DQg DQg A B DQg DQg BWS C DQg DQg BWS D DQg DQg V E DQPg DQPc V DDQ F DQc DQc V ...

Page 9

Pin Definitions Name I Input- Address inputs used to select one of the address locations. Sampled at the rising edge Synchronous the CLK Input- Byte write inputs, ...

Page 10

Pin Definitions (continued) Name I/O TDO JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG output feature is not used, this pin must be left unconnected. This pin is not ...

Page 11

Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE and CE are all asserted active, and ( asserted LOW. 3 The address presented to ...

Page 12

Truth Table The truth table for CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 follows. Address Operation Used Deselect cycle None Deselect cycle None Deselect cycle None Continue deselect cycle None Read cycle External (begin burst) Read cycle Next (continue burst) NOP/Dummy read External ...

Page 13

Truth Table for Read/Write The read/write truth table for CY7C1471BV33 follows. Function Read Write – No bytes written Write byte A – (DQ and DQP ) A A Write byte B – (DQ and DQP ) B B Write byte ...

Page 14

IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1471BV33, CY7C1473BV33, and CY7C1475BV33 incorporate a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full ...

Page 15

TAP Instruction Set Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Codes” on page 20. Three of these instructions are listed as RESERVED and must not be used. The other five instructions ...

Page 16

TAP Controller State Diagram TEST-LOGIC 1 RESET 0 1 RUN-TEST/ 0 IDLE Document Number: 001-15029 Rev. *E CY7C1471BV33, CY7C1473BV33, CY7C1475BV33 1 SELECT DR-SCA CAPTURE-DR 0 SHIFT- EXIT1-DR 0 PAUSE- EXIT2-DR 1 ...

Page 17

TAP Controller Block Diagram Selection TDI Circuitry TCK TM S Document Number: 001-15029 Rev. *E CY7C1471BV33, CY7C1473BV33, CY7C1475BV33 0 Bypass Register Selection Instruction Register Circuitry Identification Register x ...

Page 18

TAP AC Test Conditions Input pulse levels................................................V Input rise and fall times....................................................1 ns Input timing reference levels.......................................... 1.5 V Output reference levels ................................................. 1.5 V Test load termination supply voltage ............................. 1.5 V 3.3-V TAP AC Output Load Equivalent ...

Page 19

TAP AC Switching Characteristics [12, 13] Over the Operating Range Parameter Clock t TCK clock cycle time TCYC t TCK clock frequency TF t TCK clock HIGH time TH t TCK clock LOW time TL Output Times t TCK clock ...

Page 20

Identification Register Definitions CY7C1471BV33 Instruction Field Revision number (31:29) [14] Device depth (28:24) Architecture/memory type(23:18) Bus width/density(17:12) Cypress JEDEC ID code (11:1) 00000110100 ID register presence indicator (0) Scan Register Sizes Register Name Instruction Bypass ID Boundary scan order – ...

Page 21

Boundary Scan Exit Order (2 M × 36) Bit # 165-Ball ID Bit # ...

Page 22

Boundary Scan Exit Order (1 M × 72) Bit # 209-Ball ID Bit # ...

Page 23

Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied . –55 °C to +125 °C Supply voltage on ...

Page 24

Electrical Characteristics [15, 16] Over the Operating Range (continued) Parameter Description I Automatic CE SB4 power-down current—TTL inputs Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description C Address input capacitance ADDRESS ...

Page 25

Switching Characteristics Over the Operating Range. Unless otherwise noted in the following table, timing reference level is 1.5 V when V 1.25 V when V = 2.5 V. Test conditions shown in (a) of DDQ Parameter Description [18] t POWER ...

Page 26

Switching Waveforms Figure 5 shows read-write timing waveform CYC CLK t CENS t CENH CEN t CES t CEH CE ADV/ ADDRESS ...

Page 27

Switching Waveforms (continued) Figure 6 shows NOP, STALL and DESELECT Cycles waveform. Figure 6. NOP, STALL, and DESELECT Cycles 1 2 CLK CEN CE ADV/ [A: ADDRESS D(A1) DQ COMMAND WRITE READ D(A1) Q(A2) Notes 25. ...

Page 28

Switching Waveforms (continued) Figure 7 shows ZZ Mode timing waveform. CLK ZZI I SUPPLY I DDZZ ALL INPUTS (except ZZ) Outputs (Q) Notes 28. Device must be deselected when entering ZZ mode. See the 29. DQs ...

Page 29

Ordering Information Table 1 lists the CY7C1471BV33, CY7C1473BV33, CY7C1475BV33 key package features and ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. ...

Page 30

Package Diagrams Document Number: 001-15029 Rev. *E CY7C1471BV33, CY7C1473BV33, CY7C1475BV33 Figure 8. 100-pin TQFP (14 × 20 × 1.4 mm) 51-85050 *D Page [+] Feedback ...

Page 31

Package Diagrams (continued) Document Number: 001-15029 Rev. *E CY7C1471BV33, CY7C1473BV33, CY7C1475BV33 Figure 9. 165-ball FBGA (15 × 17 × 1.4 mm) 51-85165 *C Page [+] Feedback ...

Page 32

Package Diagrams (continued) Document Number: 001-15029 Rev. *E CY7C1471BV33, CY7C1473BV33, CY7C1475BV33 Figure 10. 209-ball FBGA (14 × 22 × 1.76 mm) 51-85167 *A Page [+] Feedback ...

Page 33

Reference Information Acronyms Table 2. Acronyms Acronym Description FBGA fine-pitch ball grid array I/O input/output JTAG joint test action group LSB least significant bit MSB most significant bit PLL phase-locked loop SRAM static random access memory TAP test access port ...

Page 34

Document History Page Document Title: CY7C1471BV33/CY7C1473BV33/CY7C1475BV33, 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Flow-Through SRAM with NoBL™ Architecture Document Number: 001-15029 Orig. of Submission Revision ECN Change ** 1024500 VKN/KKVT MP *A 1274731 VKN/AESA *B 2183566 ...

Page 35

Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive cypress.com/go/automotive Clocks & ...

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