ST10F272M-4Q3 STMICROELECTRONICS [STMicroelectronics], ST10F272M-4Q3 Datasheet - Page 42

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ST10F272M-4Q3

Manufacturer Part Number
ST10F272M-4Q3
Description
16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Internal Flash memory
5.7
42/176
Write operation summary
In general, each write operation is started through a sequence of three steps:
1.
2.
3.
Once selected, but not yet started, one operation can be canceled by resetting the operation
selection bit.
Available Flash Module Write Operations are summarized in the following
Table 25.
Figure 6
Figure 6.
Word Program (32-bit)
Double Word Program (64-bit)
Sector Erase
Set Protection
Program/Erase Suspend
The first instruction is used to select the desired operation by setting its corresponding
selection bit in the Flash Control Register 0.
The second step is the definition of the Address and Data for programming or the
Sectors or Banks to erase.
The last instruction is used to start the write operation, by setting the start bit WMS in
the FCR0.
shows the complete flow needed for a Write operation.
Operation
Flash write operations
Write operation control flow
No error:
Proceed with application
Select bit
Write Operation finished?
DWPG
SUSP
WPG
SER
SPR
(Check related busy bit)
Start Write Operation
Check Error Status
FCR0L.LOCK == 0?
Yes
Yes
Address and data
FDR0L/FDR0H
FDR0L/FDR0H
FDR1L/FDR1H
FCR1L/FCR1H
FDR0L/FDR0H
Error:
Error handler, ...
Re-start operation
FARL/FARH
FARL/FARH
None
No
No
Table
ST10F272M
25.
Start bit
WMS
WMS
WMS
WMS
None

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