emc646sp16ak Emlsi Inc., emc646sp16ak Datasheet - Page 30

• Manufacturer Part Number: emc646sp16ak
• Description: 4mx16 Bit Cellularram
• Manufacturer: Emlsi Inc.

Table 11: Deep Power-Down Specifications
Note: Typical (TYP) I
Table 12: Partial-Array Refresh Specifications and Conditions
Note: IPAR (MAX) values measured at 85°C. IPAR might be slightly higher for up to 500 ms after changes to the PAR array partition or when entering
standby mode.
Table 13: Capacitance
Note: These parameters are verified in device characterization and are not 100% tested.
Figure 21: AC Input/Output Reference Waveform
Note:
1. AC test inputs are driven at VccQ for a logic 1 and VssQ for a logic 0. Input rise and fall times (10% to 90%) <1.6ns.
2. Input timing begins at VccQ/2.
3. Output timing ends at VccQ/2.
Figure 22: AC Output Load Circuit
Note: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
Input Capacitance
Deep Power-Down
Capacitance(DQ)
Partial-array refresh
Description
Input/Output
standby current
Description
Description
ZZ
value is tested at Vcc=1.8V, T
VIN = VCCQ or 0V, CE# = VCCQ
Input
VccQ
VssQ
1
Tc = +25°C; f = 1 MHz;
Vcc, VccQ = 1.95V; +85°C
Conditions
V
Conditions
VccQ/2
IN
V
Conditions
A
IN
= VccQ or 0V;
=25°C and not guaranteed.
= 0V
2
DUT
Test Points
Test Points
30pF
IPAR
50-Ohm
30
Standard power (no
Symbol
Symbol
C
VccQ/2
C
designation )
IN
IO
Symbol
I
ZZ
VccQ/2
3
Output
EMC646SP16AK
Min
2.0
3.5
Array Partition
4Mx16 CellularRAM
Typ
Full
-
1/2
1/4
1/8
0
Max
6
6
Max
10
Max
140
120
110
105
95
Unit
pF
pF
Unit
Unit
Note
µA
µA
1
1