emc646sp16ak Emlsi Inc., emc646sp16ak Datasheet - Page 2

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emc646sp16ak

Manufacturer Part Number
emc646sp16ak
Description
4mx16 Bit Cellularram
Manufacturer
Emlsi Inc.
Datasheet
64Mb Async/Page/Burst CellularRAM
FEATURES
- Single device supports asynchronous, page and burst operation
- Vcc, VccQ voltages:
- Random access time: 70ns
- Burst mode READ and WRITE access:
- Page mode READ access:
- Low power consumption:
- Low-power features
OPTIONS
- Configuration: 64Mb (4 megabit x 16)
- Vcc core / VccQ I/O voltage supply: 1.8V
- Timing: 70ns access
- Frequency: 80 MHz, 104 MHz, 133 MHz
- Standby current at 85°C : 140µA(max)
- Operating temperature range:
1.7V-1.95V VCC
1.7V-1.95V VCCQ
4, 8, 16, or 32 words, or continuous burst
Burst wrap or sequential
Max clock rate: 104 MHz (t
Burst initial latency: 38.5ns (4 clocks) @ 104 MHz ,
37.5ns(5 clocks) @ 133 MHz
t
Sixteen-word page size
Interpage READ access : 70ns
Intrapage READ access : 20ns
Asynchronous READ: <25mA
Intra page READ: <18mA
Initial access, burst READ:
(38.5ns [4 clocks] @ 104 MHz) <35mA
Continuous burst READ: <30mA
Initial access, burst READ:
(37.5ns [5 clocks] @ 133 MHz) <40mA
Continuous burst READ: <35mA
Deep power down: < 10uA(max.)
On-chip temperature compensated self refresh (TCSR)
Partial array refresh (PAR)
Deep Power-down(DPD) mode
ACLK
Wireless -30°C to +85°C
: 7ns @ 104 MHz , 5.5ns @ 133 MHz
CLK
= 9.62ns) , 133MHz(t
CLK
= 7.5ns)
2
EMC646SP16AK
4Mx16 CellularRAM

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