m52s128168a-7tig Elite Semiconductor Memory Technology Inc., m52s128168a-7tig Datasheet - Page 3

• Manufacturer Part Number: m52s128168a-7tig
• Description: 2m X 16 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Absolute Maximum Rating
Note :
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to V
Notes:
.
Elite Semiconductor Memory Technology Inc.
1. V
Voltage on any pin relative to V
Voltage on V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
I/O Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input Voltage Level, CLK and CLK inputs
Input Differential Voltage, CLK and CLK inputs
Input leakage current
Output leakage current
ID
is the magnitude of the difference between the input level on CLK and the input level on CLK .
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DD
DDQ
supply relative to V
supply relative to V
Parameter
Parameter
SS
SS
SS
Preliminary
SS
= 0V, T
V
Symbol
V
V
Symbol
V
V
V
V
IN
V
T
OH
OL
IH
IN
ID
V
V
IL
, V
I
P
V
DDQ
STG
OS
I
DD
DDQ
(DC)
(DC)
(DC)
(DC)
OZ
I
D
A
DD
(DC)
(DC)
I
OUT
= 0 to 70 C
0.7 x V
0.9 x V
0.4 x V
° )
Min
-0.3
-0.3
1.7
1.7
-2
-5
-
-55 ~ +150
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
DDQ
DDQ
DDQ
Value
1.0
50
Revision : 1.4
Publication Date : Sep. 2008
V
0.3 x V
0.1 x V
V
V
DDQ
DDQ
DDQ
Max
1.9
1.9
2
5
-
+ 0.3
+ 0.3
+ 0.3
DDQ
DDQ
M53D128168A
Unit
Unit
μ
μ
mA
°
W
V
V
V
V
V
V
V
V
V
V
V
C
A
A
I
OH
I
OL
3/47
= -0.1mA
= 0.1mA
Note
1