m58lt256jsb STMicroelectronics, m58lt256jsb Datasheet - Page 30

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m58lt256jsb

Manufacturer Part Number
m58lt256jsb
Description
256 Mbit 16 Mb 16, Multiple Bank, Multilevel, Burst 1.8 V Supply, Secure Flash Memories
Manufacturer
STMicroelectronics
Datasheet

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Command interface
30/108
Table 5.
1. X = ‘don't care’, WA = Word Address in targeted bank, RD = Read Data, SRD = Status Register Data,
2. Must be same bank as in the first cycle. The signature addresses are listed in
3. Any address within the bank can be used.
4. n+1 is the number of words to be programmed.
Read Array
Read Status Register
Read Electronic Signature
Read CFI query
Clear Status Register
Block Erase
Program
Buffer Program
Program/Erase Suspend
Program/Erase Resume
Protection Register Program
Set Configuration Register
Block Protect
Block Unprotect
ESD = Electronic Signature Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD =
Program Data, PRA = Protection Register Address, PRD = Protection Register Data, CRD = Configuration
Register Data.
Commands
Standard commands
(4)
n+4
1+
1+
1+
1+
1
2
2
1
1
2
2
2
2
(1)
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Op.
1st cycle
BKA or
BKA or
BKA or
BKA or
WA
PA
BA
BA
BA
CRD
PRA
Add
BKA
BKA
BKA
BKA
PA
BA
X
X
X
n+1
(3)
(3)
(3)
(3)
1
Bus operations
40h or
PD
Data
FFh
E8h
PD
B0h
D0h
C0h
70h
90h
98h
50h
20h
10h
60h
60h
60h
n+1
1
M58LT256JST, M58LT256JSB
Read
Read
Read
Read
Write
Write
Write
Write
Write
Write
Write
Write
Write
Table
Op.
7.
2nd cycle
BKA
BKA
BKA
CRD
PRA
Add
PA
WA
WA
BA
BA
BA
BA
X
2
(2)
(2)
(2)
Data
SRD
PRD
ESD
D0h
PD
D0h
D0h
03h
01h
QD
RD
PD
n
2

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