mc68hc908sr12 Freescale Semiconductor, Inc, mc68hc908sr12 Datasheet - Page 68

• Manufacturer Part Number: mc68hc908sr12
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

FLASH Memory
4.7 FLASH Program Operation
Data Sheet
68
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $xx00, $xx40,
$xx80, or $xxC0. The procedure for programming a row of the FLASH
memory is outlined below:
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
executing code from the FLASH memory; the code must be executed
from RAM. While these operations must be performed in the order as
shown, but other unrelated operations may occur between the steps. Do
not exceed t
Characteristics.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH address to be programmed.
7. Wait for time, t
8. Repeat step 6 and 7 until all the bytes within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
range desired.
programmed.
mode.
Prog
maximum. See
FLASH Memory
rcv
Prog
nvh
(1µs), the memory can be accessed again in read
nvs
pgs
(5µs).
(30µs).
(10µs).
(5µs).
MC68HC908SR12•MC68HC08SR12 — Rev. 5.0
24.18 FLASH Memory
Freescale Semiconductor