mc68hc908sr12 Freescale Semiconductor, Inc, mc68hc908sr12 Datasheet - Page 66

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mc68hc908sr12

Manufacturer Part Number
mc68hc908sr12
Description
M68hc08 Microcontrollers Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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FLASH Memory
4.5 FLASH Page Erase Operation
Data Sheet
66
NOTE:
Use the following procedure to erase a page of FLASH memory. A page
consists of 128 consecutive bytes starting from addresses $xx00 or
$xx80. The 38-byte user interrupt vectors area also forms a page. The
38-byte user interrupt vectors cannot be erased by the page erase
operation because of security reasons. Mass erase is required to erase
this page.
Programming and erasing of FLASH locations cannot be performed by
executing code from the FLASH memory; the code must be executed
from RAM. While these operations must be performed in the order as
shown, but other unrelated operations may occur between the steps.
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the page address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
register.
range desired.
mode.
FLASH Memory
rcv
(1µs), the memory can be accessed again in read
nvs
Erase
nvh
(10µs).
(5µs).
(1ms).
MC68HC908SR12•MC68HC08SR12 — Rev. 5.0
Freescale Semiconductor

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