LM3S301 Luminary Micro, Inc, LM3S301 Datasheet - Page 94

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LM3S301

Manufacturer Part Number
LM3S301
Description
Lm3s301 Arm Microcontroller
Manufacturer
Luminary Micro, Inc
Datasheet

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Internal Memory
7.3.2
7.4
Table 7-2. Flash Register Map
a. Relative to System Control base address of 0x400FE000.
94
0X140
0x130
0x134
Offset
0x00C
0x000
0x004
0x008
0x010
0x014
a
a
a
Name
FMPRE
FMPPE
USECRL
FMA
FMD
FMC
FCRIS
FCIM
FCMISC
Flash Programming
The Stellaris devices provide a user-friendly interface for flash programming. All erase/program
operations are handled via three registers: FMA, FMD and FMC.
The flash is programmed using the following sequence:
1.
2.
3.
4.
To perform an erase of a 1-KB page:
1.
2.
3.
To perform a mass erase of the flash:
1.
2.
Register Map
Table 7-2 lists the Flash memory and control registers. The offset listed is a hexadecimal
increment to the register’s address, relative to the Flash control base address of 0x400FD000,
except for FMPRE and FMPPE, which are relative to the System Control base address of
0x400FE000.
Write source data to the FMD register.
Write the target address to the FMA register.
Write the flash write key and the WRITE bit (a value of 0xA4420001) to the FMC register.
Poll the FMC register until the WRITE bit is cleared.
Write the page address to the FMA register.
Write the flash write key and the ERASE bit (a value of 0xA4420002) to the FMC register.
Poll the FMC register until the ERASE bit is cleared.
Write the flash write key and the MERASE bit (a value of 0xA4420004) to the FMC register.
Poll the FMC register until the MERASE bit is cleared.
0x000000FF
0x000000FF
0x00000000
0x00000000
0x00000000
0x00000000
0x00000000
0x00000000
Reset
0x13
R/W1C
R/W0
R/W0
Type
R/W
R/W
R/W
R/W
R/W
RO
Preliminary
Description
Flash memory read protect
Flash memory program protect
USec reload
Flash memory address
Flash memory data
Flash memory control
Flash controller raw interrupt status
Flash controller interrupt mask
Flash controller masked interrupt status and clear
July 5, 2006
page
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