BF1202WR NXP Semiconductors, BF1202WR Datasheet - Page 8

• Manufacturer Part Number: BF1202WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
= 12 mA; T
= 12 mA; T
(mS)
Y is
10
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
y fs
ϕ fs
b is
f (GHz)
f (MHz)
g is
MCD964
MCD966
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
V
I
Fig.20 Output admittance as a function of
D
D
DS
DS
= 12 mA; T
(mS)
= 12 mA; T
(μS)
Y os
10
10
y rs
10
10
= 5 V; V
= 5 V; V
10
10
BF1202; BF1202R; BF1202WR
−1
−2
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
ϕ rs
g os
y rs
f (MHz)
f (MHz)
Product specification
MCD965
MCD967
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2