BF1202WR NXP Semiconductors, BF1202WR Datasheet

Enhancement type Field-Effect Transistor in a plastic SOT343R package

BF1202WR

Manufacturer Part Number
BF1202WR
Description
Enhancement type Field-Effect Transistor in a plastic SOT343R package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1202WR

Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.03A
Drain Source Voltage (max)
10V
Power Gain (typ)@vds
34.5@5VdB
Noise Figure (max)
11dB
Package Type
CMPAK
Pin Count
3 +Tab
Input Capacitance (typ)@vds
1.7@5V@Gate 1/1@5V@Gate 2pF
Output Capacitance (typ)@vds
0.85@5VpF
Reverse Capacitance (typ)
0.015@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF1202WR
Manufacturer:
NXP
Quantity:
120 000
Part Number:
BF1202WR
Manufacturer:
PHILIPS
Quantity:
12 458
Part Number:
BF1202WR
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Product specification
Supersedes data of 2000 Mar 29
DATA SHEET
BF1202; BF1202R; BF1202WR
N-channel dual-gate PoLo
MOS-FETs
DISCRETE SEMICONDUCTORS
2010 Sep 16

Related parts for BF1202WR

BF1202WR Summary of contents

Page 1

... DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 DISCRETE SEMICONDUCTORS 2010 Sep 16 ...

Page 2

... Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL ...

Page 3

... Fig.4 Power derating curve. 2010 Sep 16 CONDITIONS  113 C; note  119 C; note PARAMETER MCD951 (1) 150 200 T s (°C) 3 Product specification BF1202; BF1202R; BF1202WR MIN. MAX.  10  30  10  10  200  200 65 +150  ...

Page 4

... S opt f = 200 MHz mS 0.5 mS opt f = 400 MHz mS mS opt f = 800 MHz 3 opt input level for MHz; note 1 unw AGC AGC AGC 4 BF1202; BF1202R; BF1202WR MIN  G1 G2 0.5 S- 0.5 S-G2 = 100  0 100  0 120 k  G1-S  ...

Page 5

...   Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. 2010 Sep 16 MCD952 handbook, halfpage 2 1 1.2 1 G1-S (V) MCD954 handbook, halfpage 1.5 2 2.5 V G1-S (V) 5 BF1202; BF1202R; BF1202WR (mA G2  Fig.6 Output characteristics; typical values G2 (mS  Fig.8 Forward transfer admittance as a function of drain current ...

Page 6

... Fig.11 Drain current as a function of gate and drain supply voltage; typical values. 2010 Sep 16 MCD956 handbook, halfpage (μA) MCD958 handbook, halfpage kΩ 82 kΩ 100 kΩ 120 kΩ 150 kΩ 180 kΩ 220 kΩ ( BF1202; BF1202R; BF1202WR (mA  G2 120 k (connected see Fig.21 Fig ...

Page 7

... Fig.15 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; Fig.21. 2010 Sep 16 MCD960 handbook, halfpage reduction 4 3 G2-S (V) MCD962 handbook, halfpage gain reduction (dB) 7 BF1202; BF1202R; BF1202WR 0 gain (dB) −10 −20 −30 −40 − 120 k  MHz; T amb Fig.14 Typical gain reduction as a function of the AGC voltage ...

Page 8

... T D amb Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. 2010 Sep 16 MCD964 handbook, halfpage (GHz) MCD966 −10 2 handbook, halfpage ϕ fs (deg) −10 − (MHz) 8 BF1202; BF1202R; BF1202WR (μS) ϕ  mA amb Fig.18 Reverse transfer admittance and phase as a function of frequency ...

Page 9

... mA; T G2-S D amb F min (dB) (ratio) 0.9 0.805 1.1 0.725 9 Product specification BF1202; BF1202R; BF1202WR C3 4 ≈ 2.2 μH 50 Ω DUT C4 4 MGS315 = 25 C amb s 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.0005 92.6 ...

Page 10

... OUTLINE VERSION IEC SOT143B 2010 Sep scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA 10 Product specification BF1202; BF1202R; BF1202WR detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B ISSUE DATE 04-11-16 06-03-16 ...

Page 11

... OUTLINE VERSION IEC SOT143R 2010 Sep scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA SC-61AA 11 Product specification BF1202; BF1202R; BF1202WR detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 04-11-16 06-03-16 ...

Page 12

... OUTLINE VERSION IEC SOT343R 2010 Sep scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 12 BF1202; BF1202R; BF1202WR detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343R 0.1 ISSUE DATE ...

Page 13

... NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe 2010 Sep 16 BF1202; BF1202R; BF1202WR (2) This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 14

... Export might require a prior authorization from national authorities. 2010 Sep 16 BF1202; BF1202R; BF1202WR Quick reference data  The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products  ...

Page 15

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for the marking codes and the package outline drawings which were updated to the latest version. ...

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