BF1202WR NXP Semiconductors, BF1202WR Datasheet - Page 6

• Manufacturer Part Number: BF1202WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
T
Fig.9
V
R
Fig.11 Drain current as a function of gate 1 (= V
j
DS
G2-S
G1
(mA)
= 25 C.
(mA)
I D
I D
= 5 V; V
connected to V
20
16
12
20
16
12
= 4 V; T
8
4
0
8
4
0
0
0
Drain current as a function of gate 1 current;
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C.
= 4 V.
10
GG
; see Fig.21.
2
20
30
4
V GG = V DS (V)
R G1 = 68 kΩ
40
I G1 (μA)
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
82 kΩ
MCD958
MCD956
50
6
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.10 Drain current as a function of gate 1 supply
V
R
Fig.12 Drain current as a function of gate 2
DS
DS
G1
G1
(mA)
(mA)
I D
I D
= 5 V; V
= 120 k (connected to V
= 5 V; T
= 120 k (connected to V
16
12
16
12
BF1202; BF1202R; BF1202WR
8
4
0
8
4
0
0
0
voltage (= V
voltage; typical values.
j
G2-S
= 25 C.
= 4 V; T
1
j
2
= 25 C.
GG
2
); typical values.
GG
GG
); see Fig.21.
); see Fig.21.
3
4
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
MCD959
MCD957
5
6