BF1202WR NXP Semiconductors, BF1202WR Datasheet - Page 5

• Manufacturer Part Number: BF1202WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
T
V
V
T
T
Fig.7
j
j
j
DS
DS
DS
= 25 C.
= 25 C.
= 25 C.
(mA)
(μA)
I G1
Fig.5 Transfer characteristics; typical values.
I D
100
= 5 V.
= 5 V.
= 5 V.
20
16
12
80
60
40
20
8
4
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.4
0.5
0.8
1
V G2-S = 4 V
V G2-S = 4 V
3.5 V
3 V
1.2
1.5
3.5 V
1.6
2
V G1-S (V)
V G1-S (V)
1.5 V
1 V
2 V
3 V
2 V
1 V
2.5 V
1.5 V
2.5 V
MCD952
MCD954
2.5
2
5
handbook, halfpage
handbook, halfpage
V
T
V
T
Fig.8
G2-S
j
DS
j
(mA)
= 25 C.
(mS)
= 25 C.
y fs
I D
= 5 V.
Fig.6 Output characteristics; typical values.
24
16
40
30
20
10
BF1202; BF1202R; BF1202WR
= 4 V.
8
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
4
4
8
V G2-S = 4 V
12
6
V G1-S = 1.5 V
Product specification
16
8
V DS (V)
3 V
3.5 V
2 V
2.5 V
I D (mA)
MCD953
MCD955
1.4 V
1.3 V
1.2 V
1.1 V
1 V
0.9 V
10
20