BF1202WR NXP Semiconductors, BF1202WR Datasheet - Page 3

• Manufacturer Part Number: BF1202WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2010 Sep 16
handbook, halfpage
V
I
I
I
P
T
T
R
SYMBOL
D
G1
G2
SYMBOL
stg
j
DS
tot
N-channel dual-gate PoLo MOS-FETs
th j-s
(1) BF1202WR.
(2) BF1202; BF1202R.
(mW)
s
P tot
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.4 Power derating curve.
BF1202; BF1202R
BF1202WR
BF1202; BF1202R
BF1202WR
50
PARAMETER
100
(2)
(1)
150
T s (°C)
PARAMETER
MCD951
200
T
T
s
s
 113 C; note 1
 119 C; note 1
3
CONDITIONS
BF1202; BF1202R; BF1202WR






65

MIN.
VALUE
185
155
10
30
10
10
200
200
+150
150
Product specification
MAX.
UNIT
K/W
K/W
V
mA
mA
mA
mW
mW
C
C
UNIT