BF1202WR NXP Semiconductors, BF1202WR Datasheet - Page 12

• Manufacturer Part Number: BF1202WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 16
N-channel dual-gate PoLo MOS-FETs
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
12
1
1.15
e 1
A
2.2
2.0
H E
BF1202; BF1202R; BF1202WR
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R