BF1202WR NXP Semiconductors, BF1202WR Datasheet - Page 7

• Manufacturer Part Number: BF1202WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34.5@5VdB
• Noise Figure (max): 11dB
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/1@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
R
Fig.13 Gate 1 current as a function of gate 2
V
f= 50 MHz; f
Fig.15 Unwanted voltage for 1% cross-modulation
(dBμV)
V unw
DS
DS
G1
(μA)
I G1
120
110
100
= 5 V; T
= 120 k (connected to V
= 5 V; V
40
30
20
10
90
80
0
0
0
voltage; typical values.
as a function of gain reduction; typical
values; Fig.21.
unw
j
GG
= 25 C.
= 5 V; R
= 60 MHz; T
10
G1
2
= 120 k;
20
amb
GG
= 25 C.
); see Fig.21.
30
gain reduction (dB)
4
V GG = 5 V
V G2-S (V)
40
4.5 V
4 V
3.5 V
3 V
MCD960
MCD962
50
6
7
handbook, halfpage
handbook, halfpage
reduction
gain
(dB)
V
f = 50 MHz; T
Fig.14 Typical gain reduction as a function of the
V
f = 50 MHz; T
Fig.16 Drain current as a function of gain
DS
DS
(mA)
−10
−20
−30
−40
−50
I D
= 5 V; V
= 5 V; V
16
12
BF1202; BF1202R; BF1202WR
0
8
4
0
0
0
AGC voltage; see Fig.21.
reduction; typical values; see Fig.21.
GG
GG
amb
amb
= 5 V; R
= 5 V; R
10
= 25 C.
= 25 C.
1
G1
G1
= 120 k;
= 120 k;
20
2
30
gain reduction (dB)
Product specification
3
40
V AGC (V)
MCD961
MCD963
50
4