TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 63

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TE28F800B3B110

Manufacturer Part Number
TE28F800B3B110
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F800B3B110

Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F800B3B110
Manufacturer:
SAMSUNG
Quantity:
5 120
13.0
Warning:
13.1
14.0
Datasheet
Notes:
1.
2.
3.
Contact your Intel Representative
Call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers must contact
their local Intel or distribution sales office.
Visit the Intel home page at
For the most current information about Intel Advanced Boot Block Flash memory and Intel Advanced+ Boot Block
Flash memory, visit
Order Number
297948
292199
292200
297874
Note 2
V
TheB3 flash memory device products provide in-system programming and erase at 2.7 V. For
customers requiring fast programming in their manufacturing environment, the B3 flash memory
device includes an additional low-cost 12-V programming feature.
The 12-V V
found in manufacturing processes. However, this mode is not intended for extended use. 12 V can
be applied to V
blocks, and 2500 cycles on the parameter blocks. V
hours maximum.
Stressing the flash memory device beyond these limits might cause permanent damage.
During Read operations or idle times, V
operations, a 5-V supply is not permitted. The V
11.4 V to 12.6 V during Program and Erase operations.
V
The V
flash memory device. When V
error, prompting the corresponding SR.3 to be set.
Additional Information
PP
PP
PP
= V
Program and Erase Voltages
programming voltage can be held low for complete write protection of all blocks in the
http://developer.intel.com/design/flash/
PP
IL
mode enhances programming performance during the short period of time typically
Intel
PP
for Complete Protection
http://www.Intel.com
during program and Erase operations for a maximum of 1000 cycles on the main
Intel Advanced Boot Block Flash Memory Family Specification Update
AP-641 Achieving Low Power with the 3 Volt Advanced Boot Block Flash Memory
AP-642 Designing for Upgrade to the 3 Volt Advanced Boot Block Flash Memory
3 Volt Advanced Boot Block Algorithms (‘C’ and assembly)
Intel
IFDI Interactive: Play with Intel
http://developer.intel.com/design/flash/swtools
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
®
Flash Data Integrator (IFDI) Software Developer’s Kit
PP
is below V
or
http://developer.intel.com
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
PP
can be tied to a 5-V supply. For Program and Erase
PPLK
®
Flash Data Integrator on Your PC
PP
, any Program or Erase operation results in an
Document/Tool
must be supplied with either 2.7 V to 3.6 V or
PP
can be connected to 12 V for a total of 80
for technical documentation and tools.
18 Aug 2005
63

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