TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 35

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

Table 13.
Datasheet
I
I
I
I
Notes:
1.
2.
3.
4.
5.
PPW
PPE
PPES
PPWS
Sym
/
All currents are in RMS unless otherwise noted. Typical values at nominal V
The test conditions V
listed at the top of each column. V
Automatic Power Savings (APS) reduces I
Sampled, not 100% tested.
I
– If the device is read while in erase suspend, the current draw is the sum of I
– If the device is read while in program suspend, the current draw is the sum of I
CCES
V
V
V
Current
PP
PP
CC
Erase Current
Program Current
Erase Suspend
or I
DC Current Characteristics (Sheet 2 of 2)
Parameter
CCWS
is specified with the flash memory device deselected.
CC
Max, V
Intel
V
Note
®
V
CCQ
Order Number: 290580, Revision: 020
1,4
1,4
1,4
CCQ
CC
Advanced Boot Block Flash Memory (B3)
CC
Max, V
Max = 3.3 V for 0.25 µ m 32-Mbit devices.
2.7 V–3.6 V
2.7 V–3.6 V
0.05
0.05
Typ
0.2
50
8
8
CC
CCR
Min, and V
Max
200
0.1
0.1
22
22
to approximately standby levels in static operation (CMOS inputs).
5
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
2.7 V–2.85 V
1.65 V–2.5 V
0.05
0.05
Typ
0.2
16
50
CCQ
8
Min refer to the maximum or minimum V
Max
200
0.1
0.1
22
45
5
0.05
0.05
2.7 V–3.3 V
1.8 V–2.5 V
Typ
0.2
16
50
8
CC
CCES
Max
200
, T
0.1
0.1
22
45
5
CCWS
A
= +25 °C.
and I
Unit
mA
mA
mA
mA
µA
µA
and I
CCR
CCR
.
V
Program in Progress
V
Program in Progress
V
Erase in Progress
V
Erase in Progress
V
Program or Erase
Suspend in Progress
V
Program or Erase
Suspend in Progress
PP
PP
PP
PP
PP
PP
.
= V
Test Conditions
=V
= V
= V
= V
= V
CC
PP1,
PP2 (12v)
PP1,
PP2 (12v) ,
PP1,
PP2 (12v) ,
or V
18 Aug 2005
CCQ
voltage
35