TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 48

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TE28F800B3B110

Manufacturer Part Number
TE28F800B3B110
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F800B3B110

Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F800B3B110
Manufacturer:
SAMSUNG
Quantity:
5 120
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
9.2
Table 26.
Figure 14.
18 Aug 2005
48
Reset Specifications
Reset Specifications
Deep Power-Down/Reset Operations Waveforms
Notes:
1.
2.
3.
Symbol
t
t
t
PLRH1
PLRH2
PLPH
If t
If RP# is asserted while a Block Erase or Word Program operation is not executing, the
reset completes within 100 ns.
Sampled, but not 100% tested.
PLPH
RP# Low to Reset during Read
(If RP# is tied to V
applicable)
RP# Low to Reset during Block Erase
RP# Low to Reset during Program
Intel
is < 100 ns, the device can still reset, but reset is not guaranteed.
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
(A) Reset during Read Mode
(B) Reset during Program or Block Erase,
(C) Reset Program or Block Erase,
Parameter
RP# (P)
RP# (P)
RP# (P)
CC
, this specification is not
V
V
V
V
V
V
IH
IL
IH
IH
IL
IL
t
Complete
t
PLPH
PLRH
Abort
t
t
t
PLPH
PLPH
PLRH
Complete
Power-
Down
Deep
Abort
V
Min
100
t
t
t
PHQV
PHWL
PHEL
t
CC
PLPH
2.7 V – 3.6 V
t
t
t
t
t
t
PHQV
PHWL
PHEL
PHQV
PHWL
PHEL
>
t
PLPH
t
PLRH
Max
<
22
12
t
PLRH
Unit
ns
µs
µs
Datasheet
Notes
1, 2
3
3

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