TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 33

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TE28F800B3B110

Manufacturer Part Number
TE28F800B3B110
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F800B3B110

Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F800B3B110
Manufacturer:
SAMSUNG
Quantity:
5 120
6.2
Table 12.
Datasheet
Operating Conditions
Do not operate the flash memory device beyond the Operating Conditions in
exposure beyond the Operating Conditions can affect device reliability.
Temperature and Voltage Operating Conditions
Notes:
1.
2.
3.
Symbol
Cycling
V
V
V
V
V
V
V
CCQ1
CCQ2
CCQ3
T
CC1
CC2
PP1
PP2
A
V
V
V
1000 cycles on the main blocks and 2500 cycles on the parameter blocks. V
connected to 12 V for a total of 80 hours maximum.
CC
CC
PP
Max = 3.3 V for 0.25 µ m 32-Mbit devices.
= 11.4 V–12.6 V can be applied during a program/erase only for a maximum of
and V
Operating Temperature
V
I/O Supply Voltage
Supply Voltage
Block Erase Cycling
Intel
CC
Supply Voltage
CCQ
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
must share the same supply when they are in the V
Parameter
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
100,000
1.65
1.65
11.4
Min
–40
2.7
3.0
2.7
1.8
Max
12.6
+85
3.6
3.6
3.6
2.5
2.5
3.6
CC1
range.
PP
Cycles
Units
Table
Volts
Volts
Volts
Volts
°C
can be
12. Extended
18 Aug 2005
Notes
1, 2
1, 2
1, 3
1
1
3
33

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