FDD6680S Fairchild Semiconductor, FDD6680S Datasheet - Page 6

• Manufacturer Part Number: FDD6680S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD6680S

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6680S.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6680).
Figure 12. FDD6680S SyncFET body diode
0
0
Figure 13. Non-SyncFET (FDS6680) body
diode reverse recovery characteristic.
reverse recovery characteristic.
10nS/div
10nS/div
(continued)
This diode
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
leakage versus drain-source voltage and
Figure 14. SyncFET body diode reverse
0.0001
0.001
0.01
0.1
0
temperature.
V
DS
, REVERSE VOLTAGE (V)
10
100
o
C
25
o
C
20
FDS6680S Rev C (W)
30