FDD6680S Fairchild Semiconductor, FDD6680S Datasheet

FDD6680S

Manufacturer Part Number

FDD6680S

Description

MOSFET Power 30V N-Ch PowerTrench

Manufacturer

Fairchild Semiconductor

Datasheets

1.FDD6680S.pdf (7 pages)

2.FDD6680S.pdf (7 pages)

Specifications of FDD6680S

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.011 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

55 A

Power Dissipation

60 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TO-252AA

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDD6680S

Manufacturer:

FSC

Quantity:

938

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FDD6680S

30V N-Channel PowerTrench SyncFET

General Description

The FDD6680S is designed to replace a single

MOSFET and Schottky diode in synchronous DC:DC

power supplies.

maximize power conversion efficiency, providing a low

monolithic SyncFET technology.

the FDD6680S as the low-side switch in a synchronous

rectifier is indistinguishable from the performance of the

FDD6680A in parallel with a Schottky diode.

Applications

2001 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DS(ON)

DC/DC converter

Motor Drives

DSS

GSS

, T

Device Marking

integrated

STG

FDD6680S

and low gate charge. The FDD6680S includes

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Schottky

This 30V MOSFET is designed to

TO-252

diode

– Continuous

– Pulsed

FDD6680S

Device

The performance of

Parameter

using

Fairchild’s

=25

C unless otherwise noted

Reel Size

13’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1b)

(Note 3)

(Note 1)

™

Features

55 A, 30 V

Includes SyncFET Schottky body diode

Low gate charge (17nC typical)

High performance trench technology for extremely

High power and current handling capability

low R

DS(ON)

Tape width

DS(ON)

–55 to +150

16mm

Ratings

100

3.1

1.3

2.1

= 11 m @ V

= 17 m @ V

December 2000

= 10 V

= 4.5 V

FDD6680S Rev D(W)

2500 units

Quantity

Units

C/W

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