FDD6680S Fairchild Semiconductor, FDD6680S Datasheet - Page 2

• Manufacturer Part Number: FDD6680S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD6680S

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
(Note 2)
(Note 2)
Single Pulse, V
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
D
D
F
A
iF
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
GS
= 12.5A,
= 1 mA, Referenced to 25 C
= 1 mA, Referenced to 25 C
/d
= 25°C unless otherwise noted
= 10 V, I
= 24 V,
= V
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 0 V, I
= 20 V,
= –20 V,
= 10 V,
= 4.5 V,
= 10 V,
= 10 V,
= 5 V
= 0 V,
= 0 V,
t
= 300 A/µs
Test Conditions
GS
, I
D
D
D
I
I
= 1 mA
= 1 mA
S
S
= 12.5A, T
= 4.4 A
= 7 A
DD
V
V
V
I
I
V
I
V
I
R
I
GS
DS
D
D
D
D
D
DS
= 15 V, I
DS
GEN
GS
= 12.5 A
= 10 A
= 12.5 A
= 1 A,
= 12.5 A,
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V,
= 6
J
= 125 C
(Note 2)
(Note 2)
(Note 3)
D
=14A
Min
30
50
1
Typ Max Units
2010
–3.3
13.5
0.49
0.56
19.7
526
186
9.5
6.2
5.5
19
17
27
10
10
34
14
17
20
2
–100
245
500
100
4.4
0.7
14
11
17
23
18
18
55
23
24
3
FDD6680S Rev D (W)
mV/ C
mV/ C
m
mJ
nA
nA
pF
pF
pF
nC
nC
nC
nS
nC
ns
ns
ns
ns
A
V
V
A
S
A
V
A