FDD6680S Fairchild Semiconductor, FDD6680S Datasheet - Page 5

• Manufacturer Part Number: FDD6680S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD6680S

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Typical Characteristics
10
0.01
8
6
4
2
0
100
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
1
0.1
0.001
I
0.01
D
0.1
=12.5A
R
SINGLE PULSE
0.0001
R
1
DS(ON)
V
JA
T
GS
A
= 96
= 25
= 10V
LIMIT
o
o
C/W
10
C
V
D = 0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
1
g
0.1
, GATE CHARGE (nC)
0.05
DC
0.001
0.02
0.01
10s
20
V
DS
Figure 11. Transient Thermal Response Curve.
SINGLE PULSE
1s
= 5V
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
15V
(continued)
10ms
10
1ms
0.01
30
10V
100 s
100
40
0.1
t
1
, TIME (sec)
3000
2500
2000
1500
1000
60
50
40
30
20
10
500
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.1
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
10
C
1
t
OSS
10
1
, TIME (sec)
C
RSS
10
P(pk)
Duty Cycle, D = t
T
R
20
SINGLE PULSE
J
R
R
JA
- T
100
JA
T
JA
(t) = r(t) + R
A
= 96°C /W
A
= 25°C
t
1
100
= 96 ° C/W
= P * R
t
2
FDD6680S Rev D (W)
V
f = 1MHz
GS
= 0 V
JA
1
(t)
JA
/ t
1000
2
30
1000