FDD6680S Fairchild Semiconductor, FDD6680S Datasheet - Page 3

• Manufacturer Part Number: FDD6680S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD6680S

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
Electrical Characteristics
the drain pins. R
where P
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
is maximum power dissipation at T
JC
is guaranteed by design while R
C
R
a) R
P
= 25°C and R
DS(ON)
D
1in
JA
CA
2
pad of 2 oz copper
= 40°C /W when mounted on a
is determined by the user's board design.
DS(on)
is at T
T
A
= 25°C unless otherwise noted
J(max)
and V
GS
= 10V. Package current limitation is 21A
b) R
on a minimum pad.
JA
= 96°C /W when mounted
FDD6680S Rev D (W)